Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage
Journal: : MICROELECTRONICS RELIABILITY
First Author: : 曾繁朋
Document Code: : 1904D09074C44E0291C78B6CC255088B
Issue: : 168
Page Number: : 1
Number of Words: : 6000
Translation or Not: : no
Date of Publication: : 2025-03-06
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
