山东大学教师主页韩吉胜 A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage Home

Paper Publications

Current location: Home >> Scientific Research >> Paper Publications

A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage

Hits:

Institution:新一代半导体材料研究院

Title of Paper:A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage

Journal:MICROELECTRONICS RELIABILITY

First Author:曾繁朋

Document Code:1904D09074C44E0291C78B6CC255088B

Volume:168

Issue:115674

Page Number:1

Number of Words:6000

Translation or Not:No

Date of Publication:2025-03

Release Time:2025-05-10

Pre One : The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices

Next One : Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode

Personal information

Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials

You are visitors

The Last Update Time : ..