Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
Journal: : Results in Physics
First Author: : Wang, Xinyu
Document Code: : 36B4649A237D476EA6CEB102D291C92E
Issue: : 62 (2024) 107799
Page Number: : 1
Number of Words: : 5000
Translation or Not: : no
Date of Publication: : 2024-07-01
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
