Institution:新一代半导体材料研究院
Title of Paper:The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode
Journal:IEEE Transactions on Electron Devices
First Author:张斌
Document Code:1D135EA156254FA1A1F53A2C82506B79
Issue:1
Number of Words:4
Translation or Not:No
Date of Publication:2024-04
Release Time:2025-05-24
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
