Title:一种版图结构、半导体器件和其制造方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202311576748.1
Number of Inventors:4
Service Invention or Not:No
Application Date:2023-11-24
Publication Date:2024-03-08
Authorization Date:2024-03-08
Release Time:2024-04-02
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..