Title: : 一种SiC MOSFET各部分栅电容及器件沟道电容的精确提取方法
Affilication of Author(s): : 新一代半导体材料研究院
Type of Patent: : 发明
Application Number: : 202311157957.2
Number of Inventors: : 4
Service Invention or Not: : no
Application Date: : 2023-09-08
Publication Date: : 2024-04-05
Authorization Date: : 2024-04-05
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
