Title:一种SiC MOSFET各部分栅电容及器件沟道电容的精确提取方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202311157957.2
Number of Inventors:4
Service Invention or Not:No
Application Date:2023-09-08
Publication Date:2024-04-05
Authorization Date:2024-04-05
Release Time:2024-04-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
