Title: : 一种基于ScAlN介质层的InAlN/GaN MIS-HEMT及其制备方法
Affilication of Author(s): : 新一代半导体材料研究院
Type of Patent: : 发明
Application Number: : 202210196597.6
Number of Inventors: : 8
Service Invention or Not: : no
Application Date: : 2022-03-02
Publication Date: : 2024-05-28
Authorization Date: : 2024-05-28
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..