Title:一种基于ScAlN介质层的InAlN/GaN MIS-HEMT及其制备方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202210196597.6
Number of Inventors:8
Service Invention or Not:No
Application Date:2022-03-02
Publication Date:2024-05-28
Authorization Date:2024-05-28
Release Time:2024-05-31
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
