Title:一种GaN HEMTs及降低器件欧姆接触阻值的方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202310430500.8
Number of Inventors:8
Service Invention or Not:No
Application Date:2023-04-18
Publication Date:2024-06-11
Authorization Date:2024-06-11
Release Time:2024-06-13
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
