Title:集成SBD的SiC衬底上增强型GaN HEMT器件
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202410423858.2
Number of Inventors:4
Service Invention or Not:No
Application Date:2024-04-10
Publication Date:2024-06-11
Authorization Date:2024-06-11
Release Time:2024-07-02
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
