Title: : 集成SBD的SiC衬底上增强型GaN HEMT器件
Affilication of Author(s): : 新一代半导体材料研究院
Type of Patent: : 发明
Application Number: : 202410423858.2
Number of Inventors: : 4
Service Invention or Not: : no
Application Date: : 2024-04-10
Publication Date: : 2024-06-11
Authorization Date: : 2024-06-11
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
