Title: : 具有氟基气体处理AlN帽层的氮化镓HEMT器件及其制备方法
Affilication of Author(s): : 新一代半导体材料研究院
Type of Patent: : 发明
Application Number: : 202410612021.2
Number of Inventors: : 4
Service Invention or Not: : no
Application Date: : 2024-05-17
Publication Date: : 2024-09-03
Authorization Date: : 2024-09-03
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
