Title:具有氟基气体处理AlN帽层的氮化镓HEMT器件及其制备方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202410612021.2
Number of Inventors:4
Service Invention or Not:No
Application Date:2024-05-17
Publication Date:2024-09-03
Authorization Date:2024-09-03
Release Time:2024-09-05
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
