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基于能带调控结终端的氮化镓肖特基二极管及其制备方法
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Title: : 基于能带调控结终端的氮化镓肖特基二极管及其制备方法

Affilication of Author(s): : 新一代半导体材料研究院

Type of Patent: : 发明

Application Number: : 202410619665.4

Number of Inventors: : 4

Service Invention or Not: : no

Application Date: : 2024-05-20

Publication Date: : 2024-08-20

Authorization Date: : 2024-08-20

Personal information


Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

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