Title:一种SiC器件欧姆接触及其制备方法和应用
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202310696789.8
Number of Inventors:8
Service Invention or Not:No
Application Date:2023-06-13
Publication Date:2025-02-11
Authorization Date:2025-02-11
Release Time:2025-02-21
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
