Title: : 测量SiC MOSFET沟道近界面陷阱密度的方法
Affilication of Author(s): : 新一代半导体材料研究院
Type of Patent: : 发明
Application Number: : 202411603552.1
Number of Inventors: : 5
Service Invention or Not: : no
Application Date: : 2024-11-12
Publication Date: : 2025-03-07
Authorization Date: : 2025-03-07
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
