Title:测量SiC MOSFET沟道近界面陷阱密度的方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202411603552.1
Number of Inventors:5
Service Invention or Not:No
Application Date:2024-11-12
Publication Date:2025-03-07
Authorization Date:2025-03-07
Release Time:2025-06-12
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
