Title:一种高压平面栅金属-氧化物场效应晶体管及其制造方法方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202510251506.8
Number of Inventors:4
Service Invention or Not:No
Application Date:2025-03-05
Publication Date:2025-05-23
Authorization Date:2025-05-23
Release Time:2025-07-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
