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一种高压平面栅金属-氧化物场效应晶体管及其制造方法方法
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Title: : 一种高压平面栅金属-氧化物场效应晶体管及其制造方法方法

Affilication of Author(s): : 新一代半导体材料研究院

Type of Patent: : 发明

Application Number: : 202510251506.8

Number of Inventors: : 4

Service Invention or Not: : no

Application Date: : 2025-03-05

Publication Date: : 2025-05-23

Authorization Date: : 2025-05-23

Personal information


Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

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