Title:一种碳化硅SBD功率器件终端结构
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202510322302.9
Number of Inventors:3
Service Invention or Not:No
Application Date:2025-03-19
Publication Date:2025-07-01
Authorization Date:2025-07-01
Release Time:2025-09-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
