Title:一种碳化硅MOSFET功率器件终端结构
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202411433347.5
Number of Inventors:3
Service Invention or Not:No
Application Date:2024-10-15
Publication Date:2025-07-08
Authorization Date:2025-07-08
Release Time:2025-09-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
