Title:一种基于动态参数刻蚀与后处理的碳化硅刻蚀方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202510857652.5
Number of Inventors:3
Service Invention or Not:No
Application Date:2025-06-25
Publication Date:2025-08-26
Authorization Date:2025-08-26
Release Time:2025-09-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
