韩琳
Professor
Visit:次
Paper Publications
Home
Construction of High Field-Effect Mobility Multilayer MoS2Field-Effect Transistors with Excellent Stability through Interface Engineering
  • Institution:
    集成电路学院
  • Title of Paper:
    Construction of High Field-Effect Mobility Multilayer MoS2Field-Effect Transistors with Excellent Stability through Interface Engineering
  • Journal:
    ACS Applied Electronic Materials
  • Key Words:
    Degradation;Density functional theory;Dielectric materials;Electric field effects;Electron mobility;Flexible electronics;Gate dielectrics;Impurities;Layered semiconductors;Molybdenum compounds;Polymethyl methacrylates;Road construction;Silica;Silicon;Stability;Sulfur compounds;Threshold voltage
  • First Author:
    Jiang, Jianfeng
  • Document Code:
    1395293406388817922
  • Volume:
    2
  • Issue:
    7
  • Page Number:
    2132-2140
  • Number of Words:
    20
  • Translation or Not:
    No
  • Date of Publication:
    2020-07
  • Release Time:
    2025-09-22
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University