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基于仿生的超疏水集成芯片的制备方法及SERS平台和应用，韩琳，韩云蕊，张宇，韩应宽，ZL202111607225X，2023-07-25
  • Affilication of Author(s):
    山东大学
  • First Author:
    hanlin
  • Disigner of the Invention:
    hanlin,韩应宽,张宇,韩云蕊,hanlin
  • Type of Patent:
    发明专利
  • State of Patent:
    授权
  • Application Number:
    202111607225X
  • Authorization number:
    ZL202111607225X
  • Number of Inventors:
    4
  • Service Invention or Not:
    no
  • Application Date:
    2021-12-27
  • Authorization Date:
    2023-07-25

Pre One:一种硒化铟晶体管及其制造方法，韩琳，姜建峰，张宇，ZL2018110871257，2022-04-15

Next One:一种单细胞功能评估试剂盒及评估方法，韩琳，王超，张宇，ZL2020105526822，2022-12-02

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