Yuanhua Sang*, Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
发布时间：2024-04-17 点击数：
论文名称：Yuanhua Sang*, Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
发表刊物：Nano Energy
第一作者：Fulei Wang
通讯作者： Yuanhua Sang*, Hong Liu*,Lin Han*
全部作者： Shuhua Wang, Jianjun Wang, Yu Zhang, Qilu Liu,Jianfeng Jiang
论文类型：期刊论文
卷号：70
页面范围：104457
是否译文：否
发表时间：2020-04