Construction of High Field-Effect Mobility Multilayer MoS2Field-Effect Transistors with Excellent Stability through Interface Engineering
发布时间：2025-09-22 点击数：
所属单位：集成电路学院
论文名称：Construction of High Field-Effect Mobility Multilayer MoS2Field-Effect Transistors with Excellent Stability through Interface Engineering
发表刊物：ACS Applied Electronic Materials
关键字：Degradation;Density functional theory;Dielectric materials;Electric field effects;Electron mobility;Flexible electronics;Gate dielectrics;Impurities;Layered semiconductors;Molybdenum compounds;Polymethyl methacrylates;Road construction;Silica;Silicon;Stability;Sulfur compounds;Threshold voltage
第一作者：Jiang, Jianfeng
论文编号：1395293406388817922
卷号：2
期号：7
页面范围：2132-2140
字数：20
是否译文：否
发表时间：2020-07