点击次数：

发表刊物：Journal of Materials Science & Technology

刊物所在地：Elsevier

关键字：Photocatalysts; H2 evolution; S-scheme heterojunction; Internal electric field; ZnWO4-ZnIn2S4 nanosheets

摘要：The recombination of photogenerated electrons and holes is a crucial factor limiting photocatalytic H2 evolution. The S-scheme ZnWO4-ZnIn2S4 heterojunction with 2D coupling interfaces was successfully synthesized using a simple solvothermal method. An effective S-scheme interfacial charge migration route at the S-scheme heterogeneous interface was determined by energy band structure analyses (such as UPS, Mott-Schottky and XPS plots), which facilitates the separation of photoexcited carriers. It is worth noting that the optimal ZnWO4-ZnIn2S4 composite has an H2 evolution activity of 4925.3 μmol g−1 h−1 with favourable photostability and stability. Meanwhile, the ZnWO4-ZnIn2S4 heterojunction exhibits the maximum optical response value (2.8 mA cm−2) in the initial stage, effectively promoting the separation and migration of photogenerated carriers. The establishment of the built-in electric field direction at the interface can effectively promote the space charge separation between the ZnWO4 and ZnIn2S4 nanosheets, which is favorable to the photocatalytic H2 evolution. This work provides valuable guidance for designing S-scheme heterojunction photocatalysts composed of two n-type semiconductors for energy and environmental applications.

全部作者：Peng Zhang

第一作者：Meng Dai

论文类型：期刊论文

通讯作者：Zuoli He,Xin Li,Shuguang Wang

卷号：122

页面范围：231-242

字数：6000

是否译文：否

发表时间：2022-03-01