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High quality crystal growth and anisotropic physical characterization of beta-Ga2O3 single crystals grown by EFG method

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Institution:晶体材料研究所

Title of Paper:High quality crystal growth and anisotropic physical characterization of beta-Ga2O3 single crystals grown by EFG method

Journal:JOURNAL OF ALLOYS AND COMPOUNDS

First Author:Wenxiang Mu

All the Authors:Zhitai Jia,张健,Xutang Tao

Document Code:A6E5D4488DB64285936CAF0D1EC1F6FD

Volume: 714

Page Number:453

Translation or Not:No

Date of Publication:2017-08

Release Time:2019-04-14

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