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Institution:集成电路学院

Title of Paper:Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio

Journal:IEEE Electron Device Letters

First Author:刘雅璇

All the Authors:徐明升,辛倩,Xutang Tao,Song A M,Zhitai Jia

Document Code:66B4D67ADAA14F45A7151DDCA11B3602

Volume:39

Issue:11

Page Number:1696

Number of Words:4

Translation or Not:No

Date of Publication:2018-10

Release Time:2019-10-24