High quality crystal growth and anisotropic physical characterization of beta-Ga2O3 single crystals grown by EFG method
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Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:High quality crystal growth and anisotropic physical characterization of beta-Ga2O3 single crystals grown by EFG method
Journal:JOURNAL OF ALLOYS AND COMPOUNDS
First Author:Wenxiang Mu
All the Authors:Zhitai Jia,张健,Xutang Tao
Document Code:A6E5D4488DB64285936CAF0D1EC1F6FD
Volume:714
Page Number:453
Translation or Not:No
Date of Publication:2017-08
Release Time:2019-10-24