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Institution:集成电路学院

Title of Paper:Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode

Journal:Semiconductor Science and Technology

First Author:辛倩

All the Authors:徐明升,Wenxiang Mu,Zhitai Jia,王鑫煜,辛公明,Xutang Tao,Song A M,辛倩

Document Code:343681EE28154666B317A53CC22C80CE

Issue:34

Number of Words:4500

Translation or Not:No

Date of Publication:2019-06

Release Time:2019-10-25