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A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism

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Institution:晶体材料研究院(晶体材料全国重点实验室)

Title of Paper:A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism

Journal:Journal of Semiconductors

First Author:付博

All the Authors:Xutang Tao,Zhitai Jia,Wenxiang Mu,尹延如,张健

Document Code:8731C0AB390E416686F784839D156A8B

Number of Words:4000

Translation or Not:No

Date of Publication:2019-04

Release Time:2019-10-25

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