Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method
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Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method
Journal:CrystEngComm
First Author:付博
Document Code:55C24D7F45A949C9A5B51458C58A86D0
Issue:3
Number of Words:3500
Translation or Not:No
Date of Publication:2021-04
Release Time:2021-05-21