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Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method

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Affiliation of Author(s):晶体材料研究院

Journal:CrystEngComm

First Author:付博

Document Code:55C24D7F45A949C9A5B51458C58A86D0

Issue:3

Number of Words:3500

Translation or Not:no

Date of Publication:2021-04-06

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