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First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

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Affiliation of Author(s):晶体材料研究院

Journal:RSC ADVANCES

First Author:徐冉

Document Code:078D6EBC2C4E45A4A40F2AD48944B315

Volume:10

Issue:25

Page Number:14746

Number of Words:3

Translation or Not:no

Date of Publication:2020-04-15

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