First principles study of Schottky barriers at Ga2O3(100)/metal interfaces
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Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:First principles study of Schottky barriers at Ga2O3(100)/metal interfaces
Journal:RSC advances
First Author:徐冉
Document Code:078D6EBC2C4E45A4A40F2AD48944B315
Volume:10
Issue:25
Page Number:14746
Number of Words:3
Translation or Not:No
Date of Publication:2020-04
Release Time:2022-01-18