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Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction

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Affiliation of Author(s):集成电路学院

Journal:IEEE Electron Device Letters

First Author:王珣珣

Document Code:94A89A91EBFE4CEA8315878F2988EA0A

Volume:43

Issue:1

Page Number:44

Number of Words:4500

Translation or Not:no

Date of Publication:2022-01-01

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