Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction
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Institution:集成电路学院
Title of Paper:Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction
Journal:IEEE Electron Device Letters
First Author:王珣珣
Document Code:94A89A91EBFE4CEA8315878F2988EA0A
Volume:43
Issue:1
Page Number:44
Number of Words:4500
Translation or Not:No
Date of Publication:2022-01
Release Time:2022-11-15