Hysteresis-free and μ s-switching of D/E-modes Ga2O3hetero-junction FETs with the BV2/Ron,spof 0.74/0.28 GW/cm2
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Institution:新一代半导体材料研究院
Title of Paper:Hysteresis-free and μ s-switching of D/E-modes Ga2O3hetero-junction FETs with the BV2/Ron,spof 0.74/0.28 GW/cm2
Journal:APPLIED PHYSICS LETTERS
First Author:Wang, Chenlu
Document Code:1541718969515261953
Volume:120
Issue:11
Number of Words:5000
Translation or Not:No
Date of Publication:2022-03
Release Time:2024-10-15