Phase-pure ε-Ga2O3 thin films on c-plane sapphire substrates at low temperature by plasma-enhanced ALD: Growth, characterization, and interface analysis
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Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:Phase-pure ε-Ga2O3 thin films on c-plane sapphire substrates at low temperature by plasma-enhanced ALD: Growth, characterization, and interface analysis
Journal:VACUUM
First Author:张金腾
Document Code:1878997081894821889
Volume:233
Number of Words:30
Translation or Not:No
Date of Publication:2025-03
Release Time:2025-05-27