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Phase-pure ε-Ga2O3 thin films on c-plane sapphire substrates at low temperature by plasma-enhanced ALD: Growth, characterization, and interface analysis

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Affiliation of Author(s):晶体材料研究院（晶体材料全国重点实验室）

Journal:VACUUM

First Author:张金腾

Document Code:1878997081894821889

Volume:233

Number of Words:30

Translation or Not:no

Date of Publication:2025-03-01

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