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常压下提拉法生长大尺寸氧化镓单晶的方法

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Affilication of Author(s):晶体材料研究所

Disigner of the Invention:Xutang Tao

Type of Patent:发明

Application Number:2014107781685

Number of Inventors:6

Service Invention or Not:no

Application Date:2014-12-15

Publication Date:2017-03-22

Authorization Date:2014-12-15

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