常压下提拉法生长大尺寸氧化镓单晶的方法
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Title:常压下提拉法生长大尺寸氧化镓单晶的方法
Institution:晶体材料研究所
Type of Patent:发明
Application Number:2014107781685
Number of Inventors:6
Service Invention or Not:No
Application Date:2014-12-15
Publication Date:2017-03-22
Authorization Date:2014-12-15
Release Time:2018-12-06