Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure
发布时间：2021-06-02
点击次数：
- 所属单位：
- 微电子学院
- 发表刊物：
- Physica E-Low-Dimensional Systems & Nanostructures
- 第一作者：
- 时凯居
- 论文类型：
- 基础研究
- 论文编号：
- DC80AA5CA1FF477A8D8BD56F8FB81D11
- 卷号：
- 119
- 是否译文：
- 否
- 发表时间：
- 2020-05-01
- 上一条：Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction
- 下一条：Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate