【1】Wu, Zonghao.Human-friendly semitransparent organic solar cells achieving high performance能源环境科学,2024.

【2】Zhu, C. R..Exciton valley dynamics probed by Kerr rotation in WSe2 monolayers. Physical review B, 90,2014.

【3】DENG Jianyang.Deep localization features of photoluminescence in narrow AlGaN quantum wellsOpto-electronics Letters:737,2024.

【4】.Recent progress in semitransparent organic solar cellsOrganic Electronics: physics, materials, applications:107060,2024.

【5】王雪松.关于InGaN/GaN多量子阱结构内量子效率的研究ACTA PHYSICA SINICA:343-349,2014.

【6】.FBAR电极和压电薄膜制备工艺研究. 《半导体技术》, 第 ４８ 卷,2023.

【7】.Research On Etching of Distributed Bragg Reflector. Journal of Physics: Conference Series, 2645:1,2023.

【8】.深紫外 AlGaN 基多量子阱结构中 载流子辐射复合的局域特征. 发光学报, 44:1974,2023.

【9】时凯居.Inffuence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wellsMicro and Nanostructures,2023.

【10】吴宗豪.Fullerene derivatives-Promising blue light absorbers suppressing visual hazards for efficient indoor light harvestersApplied Physics Letters,2022.

【11】杜慧恬.High-PLQY and Efficient Upconverted Fluorescence of the TAPC/ PBD Exciplex with Fluorescent Guests. J. Phys. Chem. C, 126:11229-11237,2022.

【12】庞智勇.High-PLQY and Efficient Upconverted Fluorescence of the TAPC/ PBD Exciplex with Fluorescent Guests. The Journal of Physical Chemistry C , 126:11229,2022.

【13】庞智勇.Solid-Grinded Cocrystals of Acridine and 3,5-Dinitrobenzoic Acid: A Cocrystal with Strong Cocrystallization Ability and Two-Photon Excited Fluorescence Property. The Journal of Physical Chemistry C , 126:13881,2022.

【14】冀子武.Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structuresSuperlattices Microstruct,2022.

【15】冀子武.荧光法测定半导体禁带宽度的探讨物 理 学 报,2022.

【16】冀子武.Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaNJournal of Luminescence,2022.

【17】屈尚达.Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layerChin. Phys. B,2022.

【18】时凯居.Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells. Materials Express, 11:2033,2021.

【19】李睿.Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures. Superlattices and Microstructures, 160,2021.

【20】李睿.Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*. Chin. Phys. B, 30,2021.

【21】冀子武.N型掺杂ZnSe/BeTeⅡ型量子阱中空间间接带电激子跃迁发光的直接证据人 工 晶 体 学 报,2021.

【22】时凯居.Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction. JOURNAL OF LUMINESCENCE Journal, 223,2020.

【23】时凯居.Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure. Physica E-Low-Dimensional Systems & Nanostructures, 119,2020.

【24】李长富.Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate. Scientific Reports, 10,2020.

【25】李长富."Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation. Materials Express, 10:140,2020.

【26】徐明升, 徐现刚, 冀子武 and 李长富.Photoluminescence properties of blue and green multiple InGaN/GaN quantum wellsChin. Phys. B,2019.

【27】冀子武, 徐明升, 徐现刚 and 徐兴连.Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars. Journal of Luminescence, 203:216,2018.

【28】魏志贤, 冀子武, 庞智勇, 韩圣浩 and 戴成虎.Room temperature ferromagnetic and optical properties of rare earth Sm-doped tris(8-hydroxyquinoline) gallium thin films. Thin Solid Films, 648:113,2018.

【29】冀子武.Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widthsScientific Reports,2017.

【30】徐明升, 冀子武, 徐现刚 and 吕海燕.Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs. Materials Express, 7:523,2017.

【31】冀子武, 庞智勇, 韩圣浩 and 魏志贤.Tetramer bis-(8-hydroxyquinoline) Zinc Crystals Prepared by Physical Vapor Deposition Method. Crystal Research and Technology, 52,2017.

【32】徐明升, 冀子武, 徐现刚 and 李建飞.W-shaped"" injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substra. Optics Express, 25,2017.

【33】冀子武, 庞智勇, 徐现刚, 徐明升 and 李建飞.Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs. Chinese Physics B, 26,2017.

【34】冀子武, 王雪林, 徐现刚 and 王强.Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs. Applied Surface Science, 410:196,2017.

【35】胡季帆, 秦宏伟, 周广军, 冀子武 and 谢继浩.Light Control of Ferromagnetism in ZnO Films on Pt Substrate at Room Temperature. scientific reports, 7,2017.

【36】冀子武, 庞智勇, 徐现刚 and 李建飞.Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 11:184,2017.

【37】徐现刚 and 冀子武.Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodesMaterials Express,2016.

【38】Lü, Haiyan.Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells. CHINESE OPTICS LETTERS, 14:106,2016.

【39】冀子武.Temperature dependent current–voltage curves study of GaN-based blue light-emitting diodeMATER EXPRESS,2016.

【40】冀子武.Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wellsCHINESE OPTICS LETTERS,2016.

【41】冀子武.Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wellsPhysica E,2016.

【42】冀子武.Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPEChinese Physics B,2015.

【43】冀子武.Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDsSuperlattices and Microstructures,2015.

【44】郑雨军 and 冀子武.Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wellsChinese Physics B,2015.

【45】肖洪地, 冀子武 and 马瑾.Porosity-induced relaxation of strains at different depth of nanoporous GaN stuided using the Z-scan of Raman spectroscopy. JOURNAL OF ALLOYS AND COMPOUNDS, 626:154,2015.

【46】Wang Xue-Song.Internal quantum efficiency of InGaN/GaN multiple quantum well. ACTA PHYSICA SINICA, 63:127801-1-127801-7,2014.

【47】冀子武 and 徐现刚.关于 InGaN/GaN 多量子阱结构内量子效率的研究 物 理 学 报,2014.

【48】冀子武, 肖洪地 and 徐现刚.Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching CHIN. PHYS. LETT.,2014.

【49】肖洪地, 徐现刚 and 冀子武.Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells Physica E,2013.

【50】Yin, Zhengmao.Light transmission enhancement from hybrid ZnO micro-mesh and nanorod arrays with application to GaN-based light-emitting diodes. Optics Express, 21:28531-28542,2013.

【51】冀子武.Green and blue emissions in phase-separated InGaN quantum wells. Journal of applied physics, 114:163525-1,2013.

【52】冀子武 and 徐现刚.Effect of reactor pressure upon photoluminescence properties of ZnTe homoepitaxial layer. OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS, 7:730,2013.

【53】肖洪地 and 冀子武.Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells. Journal of applied physics, 114:093508-1,2013.

【54】肖洪地, 刘建强, 栾彩娜, 冀子武 and 裴海燕.Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition. JOURNAL OF ALLOYS AND COMPOUNDS, 563:72,2013.

【55】肖洪地, 郑雨军, 徐现刚 and 冀子武.Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates. Thin Solid Films, 536:240,2013.

【56】赵明文, 徐现刚 and 冀子武.Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPEPhys. Status Solidi A,2012.

【57】冀子武.Fabrication of Non-Stoichiometric Titanium Dioxide by Spark Plasma Sintering and Its Thermoelectric PropertiesMater. Trans.,2012.

【58】刘建强, 栾彩娜, 冀子武, 肖洪地 and 崔积适.Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers . Applied Physics Letters, 100:213101,2012.

【59】梅良模, 颜世申, 冀子武, 陈延学 and 刘国磊.Growth and photoluminescence properties of inclined ZnO and ZnCoO thin _lms on SrTiO3(110) substrates. Chinese Physics B, 21:057801-1,2012.

【60】冀子武.Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surfaceNucl. Instrum. Meth. B,2012.

【61】冀子武.Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells. Optics Express, 20:3932,2012.

【62】冀子武.The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon CarbideAdv. Mater. Res.,2012.

【63】冀子武.Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperatureChinese Physics B,2012.

【64】冀子武.Annealing effect and photoluminescence properties in Tm+-implanted ZnO crystalNucl. Instrum. Meth. B,2012.

【65】冀子武.A weak electron transporting material with high triplet energy and thermal stability via a super twisted structure for high efficient blue electrophosphorescent devices《J. Mater. Chem.》,2011.

【66】Optical properties of exciton and charged exciton in undoped ZnSe/BeTe type-II quantum wells under high magnetic fields，Acta. Phys. Sin-Ch. Ed.. Acta. Phys. Sin-Ch. Ed, 60:047805,2011.

【67】郑雨军 and 冀子武.超强磁场下非掺杂ZnSe/BeTe II型量子阱中激子和带电激子的光学特性物理 学 报 Acta Phys. Sin.,2011.

【68】郑雨军 and 冀子武.ZnSe/BeTe II型量子阱中界面结构对发光特性的影响物理 学 报 Acta Phys. Sin.,2010.

【69】冀子武.Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells. Chin. Phys. B, 19:117303-1,2010.

【70】Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells. Chin. Phys. B, 19:117303,2010.

【71】Interface structure effects on optical property of undoped ZnSe/BeTe type-ΙΙ quantum wells. Acta. Phys. Sin-Ch. Ed, 59:7986,2010.

【72】冀子武 and 郑雨军.Statistical properties of single molecule under stochastic gating. J. At. Mol. Sci., 1:280,2010.

【73】Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density. Semicond. Sci. Technol., 24:095016,2009.

【74】冀子武.Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density. Semiconductor Science and Technology, 24:095016,2009.

【75】冀子武 and 郑雨军.Photon Counting Statistics of Single Molecules in Solid MatrixJ Chem Phys,2009.

【76】Spatially direct charged exciton photoluminescence in undoped ZnSe/BeTe type-II quantum wells. Appl. Phys. Lett., 92:093107,2008.

【77】Magnetic field effect of charged excitons in n-doped ZnSe/BeTe type-II quantum wells. Acta. Phys. Sin-Ch. Ed., 57:6609-05,2008.

【78】冀子武.掺杂ZnSe/BeTe II型量子阱结构中带电激子的磁场效应. ACTA PHYSICA SINICA, 57:6609,2008.

【79】Optical property of modulated n-doped ZnSe/BeTe type-II quantum wells. Acta. Phys. Sin-Ch. Ed., 57:3260-07,2008.

【80】Built-in electric field and a new type of charged excitons observed in modulation-doped ZnSe/BeTe type- II quantum well. Acta. Phys. Sin-Ch. Ed., 87:1214-06,2008.

【81】冀子武.Optical property of modulation n-doped ZnSe/BeTe type-ΙΙ quantum wellsActa Phys. Sin.,2008.

【82】冀子武.Spatially direct charged exciton photoluminescence in undoped ZnSe/BeTe type-II quantum wellsAppl. Phys. Lett.,2008.

【83】冀子武.Built-in electric field and a new type of charged excitons realized in modulation-doped ZnSe/BeTe type-ΙΙ quantum wellActa Phys. Sin.,2008.

【84】Optical de Haas oscillations of charged excitons in type-II ZnSe/BeTe quantum wells. J. Phys.: Conf. Ser., 51:427-430,2006.

【85】lectric- and magnetic- field effects on the radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells. Sci. Technol., 21:87,2006.

【86】Spin dependent transitions of charged excitons in type-II quantum wells. Physica E, 22:632,2004.