冀子武

教育与工作经历

• 2016-4-至今
  山东大学
  教授/博导
• 2007-11 — 2016-4
  山东大学
  教授/博导
• 2006-4 — 2007-11
  日本东京大学
  博士后研究员
• 2001-7 — 2001-12
  日本国家产业技术综合研究所
  共同研究员
• 1986-7 — 1996-4
  青岛科技大学
  讲师

在读学生

授课信息

本科生课程

1.传感器技术

2.电路基础实验

3.电路基础实验

4.模拟电子技术实验

研究生课程

1.超晶格材料与器件

2.超晶格材料与器件

3.超晶格材料与器件

4.半导体光电子学

5.超晶格材料与器件

6.超晶格材料与器件

7.半导体光电子学

8.超晶格材料与器件

9.超晶格材料与器件

10.半导体光电子学

11.超晶格材料与器件

12.半导体光电子学

13.半导体光电子学

14.超晶格材料与器件

15.半导体光电子学

16.超晶格材料与器件

17.半导体光电子学

18.超晶格材料与器件

19.半导体光电子学

20.超晶格材料与器件

21.半导体光电子学

22.超晶格材料与器件

23.半导体光电子学

24.超晶格材料与器件

25.半导体光电子学

科研方向

1. 低维（纳米）宽禁带半导体材料/器件的光电特性

科研项目

1. 基于偏振调控/能带剪裁的高效AlGaN基深紫外LED的研究, 2022/09/07-2026/12/31

2. 基于偏振调控/能带剪裁的高效AlGaN基深紫外LED的研究, 2023/01/01-2026/12/16

3. 海洋传感器生物污损防护技术研究及产业化应用, 2016/06/01-2018/06/30

4. 发光均匀、低热堆积的高性能InGaN基绿光LD的研究, 2018/08/16-2022/12/31

5. 基于能带工程/应力调控的高效InGaN基红光LED的研究, 2016/08/17-2020/12/31

6. 基于光谱的GaN基异质结材料与器件缺陷表征研究, 2014/11/28-2016/11/30

7. 利用纳米孔（柱）阵列同时提高LED内、外量子效率的研究, 2015/01/01-2017/12/31

8. 具有纳米孔（柱）阵列的LED结构的制备及量子效率的研究, 2013/01/01-2015/12/31

9. ZnTe基I型和II型量子阱结构的制备和光学特性研究, 2012/12/29-2015/12/31

10. 留学回国启动基金, 2008/08/14-2010/08/14

11. 2009凝聚态及光物理学术研讨会, 2010/12/31-2010/12/31

12. ZnSe/BeTe/ZnSeII型量子结构中的光学各向异性和激子复合体跃迁, 2009/01/01-2011/12/31

13. 调制n型掺杂ZnSe/BeTe/ZnSeII型量子阱结构中空间间接发光跃迁的起源, 2009/01/01-2011/12/31

14. ZnSe/BeTeII型量子结构中I型跃迁、II型跃迁的物理机制及二者的相互关联, 2008/01/01-2008/12/31

15. 发光均匀、低热堆积的高性能InGaN基绿光LD的研究, 2018/08/16-2022/12/31

16. 基于光谱的GaN基异质结材料与器件缺陷表征研究, 2014/11/28-2016/11/30

17. 利用纳米孔（柱）阵列同时提高LED内、外量子效率的研究, 2015/01/01-2017/12/31

18. 2009凝聚态及光物理学术研讨会, 2010/12/31-2010/12/31

19. ZnSe/BeTe/ZnSeII型量子结构中的光学各向异性和激子复合体跃迁, 2009/01/01-2011/12/31

20. 调制n型掺杂ZnSe/BeTe/ZnSeII型量子阱结构中空间间接发光跃迁的起源, 2009/01/01-2011/12/31

21. ZnSe/BeTeII型量子结构中I型跃迁、II型跃迁的物理机制及二者的相互关联, 2008/01/01-2008/12/31

22. 具有纳米孔（柱）阵列的LED结构的制备及量子效率的研究, 2013/01/01-2015/12/31

发明专利

1. 一种InGaN/GaN多量子阱基红光LED结构的制备方法,2024/03/26

2. 一种碲化锌同质外延层的制备方法,

3. 一种碲化锌/砷化镓异质外延层的制备方法,

4. 消除ZnSe/BeTeⅡ量子阱中内秉电场的方法,

5. 用光致激发在非掺杂量子阱中产生带电激子的方法及装置,

6. 用分子束外延工艺制备II型量子阱的方法及设备,

7. 消除ZnSe/BeTeⅡ量子阱中内秉电场的方法,2009/11/13

8. 用光致激发在非掺杂量子阱中产生带电激子的方法及装置,2009/04/21

9. 用分子束外延工艺制备II型量子阱的方法及设备,2009/04/21

主要论文

1.  吴宗豪. Fullerene derivatives-Promising blue light absorbers suppressing visual hazards for efficient indoor light harvesters.  Applied Physics Letters,  2022. 

2.  时凯居. Inffuence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells.  Micro and Nanostructures,  2023. 

3.  . Research On Etching of Distributed Bragg Reflector.  Journal of Physics: Conference Series,  2645,  1, 2023. 

4.  . FBAR电极和压电薄膜制备工艺研究.  《半导体技术》,  第 ４８ 卷,  2023. 

5.  . 深紫外 AlGaN 基多量子阱结构中 载流子辐射复合的局域特征.  发光学报,  44,  1974, 2023. 

6.  Bai Hong-Liang. Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO3(110) substrates.  Chinese Physics B,  21,  635-639, 2012. 

7.  李睿. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high in content.  Chinese Physics B,  30,  615-619, 2021. 

8.  杜慧恬. High-PLQY and Efficient Upconverted Fluorescence of the TAPC/ PBD Exciplex with Fluorescent Guests.  J. Phys. Chem. C,  126,  11229-11237, 2022. 

9.  冀子武. Fullerene derivatives—Promising blue light absorbers suppressing visual hazards for efficient indoor light harvesters.  Appl. Phys. Lett.,  121,  2022. 

10.  庞智勇. High-PLQY and Efficient Upconverted Fluorescence of the TAPC/ PBD Exciplex with Fluorescent Guests.  The Journal of Physical Chemistry C ,  126,  11229, 2022. 

11.  庞智勇. Solid-Grinded Cocrystals of Acridine and 3,5-Dinitrobenzoic Acid: A Cocrystal with Strong Cocrystallization Ability and Two-Photon Excited Fluorescence Property.  The Journal of Physical Chemistry C ,  126,  13881, 2022. 

12.  Ming, Xianbing. Annealing effect and photoluminescence properties in Tm+- implanted ZnO crystal.  274,  172-176, 2012. 

13.  Lü, Haiyan. Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells.  CHINESE OPTICS LETTERS,  14,  106, 2016. 

14.  Yin, Zhengmao. Light transmission enhancement from hybrid ZnO micro-mesh and nanorod arrays with application to GaN-based light-emitting diodes.  Optics Express,  21,  28531-28542, 2013. 

15.  Wang Xue-Song. Internal quantum efficiency of InGaN/GaN multiple quantum well.  ACTA PHYSICA SINICA,  63,  127801-1-127801-7, 2014. 

16.  Xu, Mingsheng. Temperature dependent current-voltage curves study of GaN-based blue light-emitting diode.  Materials Express,  6,  205-209, 2016. 

17.  李建飞. W-shaped injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate.  Optics Express,  25,  A871-A879, 2017. 

18.  冀子武. Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures.  Superlattices Microstruct,  2022. 

19.  冀子武. Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN.  Journal of Luminescence,  2022. 

20.  屈尚达. Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer.  Chin. Phys. B,  2022. 

21.  冀子武. 荧光法测定半导体禁带宽度的探讨.  物 理 学 报,  2022. 

22.  冀子武. N型掺杂ZnSe/BeTeⅡ型量子阱中空间间接带电激子跃迁发光的直接证据.  人 工 晶 体 学 报,  2021. 

23.  李睿. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*.  Chin. Phys. B,  30,  2021. 

24.  李睿. Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures.  Superlattices and Microstructures,  160,  2021. 

25.  时凯居. Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells.  Materials Express,  11,  2033, 2021. 

26.  李长富. "Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation.  Materials Express,  10,  140, 2020. 

27.  李长富. Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate.  Scientific reports,  10,  2020. 

28.  时凯居. Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction.  JOURNAL OF LUMINESCENCE Journal,  223,  2020. 

29.  时凯居. Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure.  Physica E-Low-Dimensional Systems & Nanostructures,  119,  2020. 

30.  冀子武. Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths.  scientific reports,  2017. 

31.  徐明升 , 徐现刚 , 冀子武  , 李长富. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells.  Chin. Phys. B,  2019. 

32.  冀子武 , 肖洪地 , 郑雨军  , 徐现刚. Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates.  Thin Solid Films,  536,  240, 2013. 

33.  冀子武 , 庞智勇 , 徐现刚  , 李建飞. Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs.  中国物理B（英文版）,  26,  515, 2017. 

34.  郑雨军  , 冀子武. Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells.  Chinese Physics B,  2015. 

35.  郑雨军  , 冀子武. Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type II quantum wells.  Chinese Physics B,  2010. 

36.  郑雨军  , 冀子武. ZnSe/BeTe II型量子阱中界面结构对发光特性的影响.  物理 学 报 Acta Phys. Sin.,  2010. 

37.  郑雨军  , 冀子武. 超强磁场下非掺杂ZnSe/BeTe II型量子阱中激子和带电激子的光学特性.  物理 学 报 Acta Phys. Sin.,  2011. 

38.  刘建强 , 栾彩娜 , 冀子武 , 肖洪地  , 崔积适. Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers .  Applied Physics Letters,  100,  213101, 2012. 

39.  冀子武. ZnSe/BeTe II 型量子阱中界面结构对发光特性的影响.  ACTA PHYSICA SINICA,  59,  7986, 2010. 

40.  冀子武 , 庞智勇 , 韩圣浩  , 魏志贤. Tetramer bis-(8-hydroxyquinoline) Zinc Crystals Prepared by Physical Vapor Deposition Method.  Crystal Research and Technology,  52,  2017. 

41.  冀子武 , 肖洪地  , 徐现刚. Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells .  Physica E,  2013. 

42.  冀子武 , 徐明升 , 徐现刚  , 徐兴连. Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars.  Journal of Luminescence,  203,  216, 2018. 

43.  魏志贤 , 冀子武 , 庞智勇 , 韩圣浩  , 戴成虎. Room temperature ferromagnetic and optical properties of rare earth Sm-doped tris(8-hydroxyquinoline) gallium thin films.  Thin Solid Films,  648,  113, 2018. 

44.  冀子武 , 庞智勇 , 徐现刚 , 徐明升  , 李建飞. Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs.  Chinese Physics B,  26,  2017. 

45.  胡季帆 , 秦宏伟 , 周广军 , 冀子武  , 谢继浩. Light Control of Ferromagnetism in ZnO Films on Pt Substrate at Room Temperature.  scientific reports,  7,  2017. 

46.  冀子武 , 王雪林 , 徐现刚  , 王强. Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs.  Applied surface science,  410,  196, 2017. 

47.  冀子武 , 庞智勇 , 徐现刚  , 李建飞. Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties.  OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,  11,  184, 2017. 

48.  徐明升 , 冀子武 , 徐现刚  , 吕海燕. Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs.  Materials Express,  7,  523, 2017. 

49.  冀子武. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells.  CHINESE OPTICS LETTERS,  2016. 

50.  冀子武. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE.  Chin. Phys. B,  2015. 

51.  刘建强 , 肖洪地 , 栾彩娜 , 冀子武  , 崔积适. Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers .  Applied Physics Letters,  100,  213101, 2012. 

52.  徐明升 , 冀子武 , 徐现刚  , 李建飞. W-shaped"" injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substra.  Optics Express,  25,  2017. 

53.  冀子武. 超强磁场下非掺杂ZnSe/BeTeII型量子阱中激子和带电激子的光学特性.  ACTA PHYSICA SINICA,  60,  047805-1, 2011. 

54.  冀子武. Spatially direct charged exciton photoluminescence in undoped ZnSe/BeTe type-II quantum wells.  Appl. Phys. Lett.,  2008. 

55.  冀子武. Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface.  Nucl. Instrum. Meth. B,  2012. 

56.  刘国磊 , 陈延学 , 梅良模 , 颜世申  , 冀子武. Growth and photoluminescence properties of inclined ZnO and ZnCoO thin _lms on SrTiO3(110) substrates.  Chinese Physics B,  21,  057801-1, 2012. 

57.  冀子武. Green and blue emissions in phase-separated InGaN quantum wells.  Journal of applied physics,  114,  163525-1, 2013. 

58.  冀子武. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells.  Optics Express,  20,  3932, 2012. 

59.  冀子武. Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells.  Physica E,  2016. 

60.  冀子武  , 徐现刚. Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodes.  Materials Express,  2016. 

61.  冀子武. Temperature dependent current–voltage curves study of GaN-based blue light-emitting diode.  MATER EXPRESS,  2016. 

62.  冀子武 , 肖洪地  , 徐现刚. Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching .  CHIN. PHYS. LETT.,  2014. 

63.  冀子武  , 徐现刚. 关于 InGaN/GaN 多量子阱结构内量子效率的研究 .  物 理 学 报,  2014. 

64.  冀子武. Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells.  Chin. Phys. B,  2015. 

65.  肖洪地 , 冀子武  , 马瑾. Porosity-induced relaxation of strains at different depth of nanoporous GaN stuided using the Z-scan of Raman spectroscopy.  JOURNAL OF ALLOYS AND COMPOUNDS,  626,  154, 2015. 

66.  冀子武. Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature.  Chin. Phys. B,  2012. 

67.  冀子武. A weak electron transporting material with high triplet energy and thermal stability via a super twisted structure for high efficient blue electrophosphorescent devices.  《J. Mater. Chem.》,  2011. 

68.  冀子武. Optical property of modulation n-doped ZnSe/BeTe type-ΙΙ quantum wells.  Acta Phys. Sin.,  2008. 

69.  冀子武. Built-in electric field and a new type of charged excitons realized in modulation-doped ZnSe/BeTe type-ΙΙ quantum well.  Acta Phys. Sin.,  2008. 

70.  冀子武. The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide.  Adv. Mater. Res.,  2012. 

71.  冀子武. Annealing effect and photoluminescence properties in Tm+-implanted ZnO crystal.  Nucl. Instrum. Meth. B,  2012. 

72.  吴拥中 , 冀子武 , 徐现刚  , 郝霄鹏. Light transmission enhancement from hybrid ZnO micro-mesh & nanorod arrays with application to GaN-based light-emitting diodes.  Optics Express,  21,  28531, 2013. 

73.  冀子武  , 肖洪地. Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells.  Journal of applied physics,  114,  093508-1, 2013. 

74.  冀子武  , 徐现刚. Effect of reactor pressure upon photoluminescence properties of ZnTe homoepitaxial layer.  OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS,  7,  730, 2013. 

75.  冀子武 , 赵明文  , 徐现刚. Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE.  Phys. Status Solidi A,  2012. 

76.  肖洪地 , 刘建强 , 栾彩娜 , 冀子武  , 裴海燕. Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition.  JOURNAL OF ALLOYS AND COMPOUNDS,  563,  72, 2013. 

77.  冀子武. 掺杂ZnSe/BeTe II型量子阱结构中带电激子的磁场效应.  ACTA PHYSICA SINICA,  57,  6609, 2008. 

78.  冀子武. Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells.  Chin. Phys. B,  19,  117303-1, 2010. 

79.  冀子武. Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density.  Semiconductor Science and Technology,  24,  095016, 2009. 

80.  冀子武. Fabrication of Non-Stoichiometric Titanium Dioxide by Spark Plasma Sintering and Its Thermoelectric Properties.  Mater. Trans.,  2012. 

81.  冀子武. Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs.  Superlattices and Microstructures,  2015. 

82.  冀子武 , 马瑾  , 肖洪地. Porosity-induced relaxation of strains at different depth of nanoporous GaN stuided using the Z-scan of Raman spectroscopy.  JOURNAL OF ALLOYS AND COMPOUNDS,  626,  154, 2015. 

83.  冀子武 , 徐现刚 , 郝霄鹏  , 吴拥中. Light transmission enhancement from hybrid ZnO micro-mesh & nanorod arrays with application to GaN-based light-emitting diodes.  Optics Express,  21,  28531, 2013. 

84.  刘建强 , 栾彩娜 , 冀子武 , 裴海燕  , 肖洪地. Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition.  JOURNAL OF ALLOYS AND COMPOUNDS,  563,  72, 2013. 

85.  肖洪地 , 徐现刚  , 冀子武. Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells .  Physica E,  2013. 

86.  冀子武. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE.  Chin. Phys. B,  2015. 

87.  冀子武. Green and blue emissions in phase-separated InGaN quantum wells.  Journal of applied physics,  114,  163525-1, 2013. 

88.  冀子武. Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells.  Physica E,  2016. 

89.  肖洪地 , 徐现刚  , 冀子武. Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching .  CHIN. PHYS. LETT.,  2014. 

90.  徐现刚  , 冀子武. 关于 InGaN/GaN 多量子阱结构内量子效率的研究 .  物 理 学 报,  2014. 

91.  冀子武. Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells.  Chin. Phys. B,  2015. 

92.  冀子武. The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide.  Adv. Mater. Res.,  2012. 

93.  冀子武. Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature.  Chin. Phys. B,  2012. 

94.  肖洪地  , 冀子武. Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells.  Journal of applied physics,  114,  093508-1, 2013. 

95.  徐现刚  , 冀子武. Effect of reactor pressure upon photoluminescence properties of ZnTe homoepitaxial layer.  OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS,  7,  730, 2013. 

96.  肖洪地 , 郑雨军 , 徐现刚  , 冀子武. Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates.  Thin Solid Films,  536,  240, 2013. 

97.  冀子武. Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs.  Superlattices and Microstructures,  2015. 

98.  冀子武. Fabrication of Non-Stoichiometric Titanium Dioxide by Spark Plasma Sintering and Its Thermoelectric Properties.  Mater. Trans.,  2012. 

99.  胡季帆 , 秦宏伟 , 周广军 , 冀子武  , 谢继浩. Light Control of Ferromagnetism in ZnO Films on Pt Substrate at Room Temperature.  scientific reports,  7,  2017. 

100.  肖洪地 , 栾彩娜 , 冀子武 , 刘建强  , 崔积适. Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers .  100,  213101, 2012. 

101.  梅良模 , 颜世申 , 冀子武 , 陈延学  , 刘国磊. Growth and photoluminescence properties of inclined ZnO and ZnCoO thin _lms on SrTiO3(110) substrates.  Chinese Physics B,  21,  057801-1, 2012. 

102.  魏志贤 , 冀子武 , 庞智勇 , 韩圣浩  , 戴成虎. Room temperature ferromagnetic and optical properties of rare earth Sm-doped tris(8-hydroxyquinoline) gallium thin films.  Thin Solid Films,  648,  113, 2018. 

103.  冀子武 , 庞智勇 , 韩圣浩  , 魏志贤. Tetramer bis-(8-hydroxyquinoline) Zinc Crystals Prepared by Physical Vapor Deposition Method.  Crystal Research and Technology,  52,  2017. 

104.  刘建强 , 栾彩娜 , 冀子武 , 裴海燕  , 肖洪地. Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition.  JOURNAL OF ALLOYS AND COMPOUNDS,  563,  72, 2013. 

105.  徐明升 , 冀子武 , 徐现刚  , 吕海燕. Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs.  Materials Express,  7,  523, 2017. 

106.  冀子武 , 马瑾  , 肖洪地. Porosity-induced relaxation of strains at different depth of nanoporous GaN stuided using the Z-scan of Raman spectroscopy.  JOURNAL OF ALLOYS AND COMPOUNDS,  626,  154, 2015. 

107.  冀子武 , 徐现刚 , 郝霄鹏  , 吴拥中. Light transmission enhancement from hybrid ZnO micro-mesh & nanorod arrays with application to GaN-based light-emitting diodes.  Optics Express,  21,  28531, 2013. 

108.  冀子武 , 庞智勇 , 徐现刚 , 徐明升  , 李建飞. Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs.  Chinese Physics B,  26,  2017. 

109.  冀子武 , 庞智勇 , 徐现刚  , 李建飞. Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties.  OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,  11,  184, 2017. 

110.  冀子武 , 徐明升 , 徐现刚  , 徐兴连. Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars.  Journal of Luminescence,  203,  216, 2018. 

111.  徐明升 , 冀子武 , 徐现刚  , 李建飞. W-shaped"" injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substra.  Optics Express,  25,  2017. 

112.  冀子武  , 郑雨军. Photon Counting Statistics of Single Molecules in Solid Matrix.  J Chem Phys,  2009. 

113.  冀子武  , 郑雨军. Statistical properties of single molecule under stochastic gating.  J. At. Mol. Sci.,  1,  280, 2010. 

114.  冀子武 , 王雪林 , 徐现刚  , 王强. Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs.  Applied surface science,  410,  196, 2017. 

115.  冀子武. 超强磁场下非掺杂ZnSe/BeTeII型量子阱中激子和带电激子的光学特性.  ACTA PHYSICA SINICA,  60,  047805-1, 2011. 

116.  冀子武. Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells.  Chin. Phys. B,  19,  117303-1, 2010. 

117.  冀子武. ZnSe/BeTe II 型量子阱中界面结构对发光特性的影响.  ACTA PHYSICA SINICA,  59,  7986, 2010. 

118.  冀子武. 掺杂ZnSe/BeTe II型量子阱结构中带电激子的磁场效应.  ACTA PHYSICA SINICA,  57,  6609, 2008. 

119.  冀子武. Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density.  Semiconductor Science and Technology,  24,  095016, 2009. 

120.  徐现刚  , 冀子武. Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodes.  Materials Express,  2016. 

121.  冀子武. Temperature dependent current–voltage curves study of GaN-based blue light-emitting diode.  MATER EXPRESS,  2016. 

122.  冀子武. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells.  CHINESE OPTICS LETTERS,  2016. 

123.  冀子武. Optical property of modulation n-doped ZnSe/BeTe type-ΙΙ quantum wells.  Acta Phys. Sin.,  2008. 

124.  冀子武. Built-in electric field and a new type of charged excitons realized in modulation-doped ZnSe/BeTe type-ΙΙ quantum well.  Acta Phys. Sin.,  2008. 

125.  冀子武. Spatially direct charged exciton photoluminescence in undoped ZnSe/BeTe type-II quantum wells.  Appl. Phys. Lett.,  2008. 

126.  冀子武. Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface.  Nucl. Instrum. Meth. B,  2012. 

127.  冀子武. Annealing effect and photoluminescence properties in Tm+-implanted ZnO crystal.  Nucl. Instrum. Meth. B,  2012. 

128.  冀子武. A weak electron transporting material with high triplet energy and thermal stability via a super twisted structure for high efficient blue electrophosphorescent devices.  《J. Mater. Chem.》,  2011. 

129.  赵明文 , 徐现刚  , 冀子武. Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE.  Phys. Status Solidi A,  2012. 

130.  冀子武. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells.  Optics Express,  20,  3932, 2012. 

研究领域

本人一直从事多种半导体材料/器件的光电特性研究，包括：块材料、薄膜、碳纳米管，以及量子点、量子阱等低维（纳米）半导体材料/器件（如LED，LD，日盲探测器等）的光电特性。现主要从事宽禁带GaN基多量子阱结构（LED）光学特性的研究。这是因为，尽管GaN基LED已经被广泛应用于照明、显示、数据存储、保密通讯、生物化学等领域，但由于合适衬底的缺乏，以及内部缺陷、内建电场、内反射、p型（Mg）掺杂困难等诸多原因的存在，致使高效、高性能GaN基LED的制备一直是该领域丞待解决的难题。本研究聚焦于上述难题，在传统GaN基多量子阱结构/LED结构的基础上，通过能带工程/应力调控，即通过导入准超晶格In(Al)GaN/(Al)GaN下置层作为有源区应力释放层、(Al)GaN插入层作为阱/垒界面的应力补偿层、 低温p-(Al)GaN缓冲层作为空穴注入层（兼具调整能带图形）等结构来制备GaN基LED；通过多种光谱测量（光致发光、电致发光、时间分辨等）和结构质量表征（AFM、XRD、Raman、SEM、TEM等）， 来调查结构参数/生长工艺对缺陷密度、组分起伏、应力、辐射波长（In并入率）和发光效率等的影响规律，从而阐明其载流子的注入（产生）、传输、复合发光过程的内部物理机制，并最终探索出制备高效、高性能InGaN基多量子阱LED的较佳结构参数和生长工艺。