【1】.FBAR电极和压电薄膜制备工艺研究. 《半导体技术》, 第 ４８ 卷,2023.

【2】.Research On Etching of Distributed Bragg Reflector. Journal of Physics: Conference Series, 2645:1,2023.

【3】.深紫外 AlGaN 基多量子阱结构中 载流子辐射复合的局域特征. 发光学报, 44:1974,2023.

【4】时凯居.Inffuence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wellsMicro and Nanostructures,2023.

【5】吴宗豪.Fullerene derivatives-Promising blue light absorbers suppressing visual hazards for efficient indoor light harvestersApplied Physics Letters,2022.

【6】杜慧恬.High-PLQY and Efficient Upconverted Fluorescence of the TAPC/ PBD Exciplex with Fluorescent Guests. J. Phys. Chem. C, 126:11229-11237,2022.

【7】庞智勇.High-PLQY and Efficient Upconverted Fluorescence of the TAPC/ PBD Exciplex with Fluorescent Guests. The Journal of Physical Chemistry C , 126:11229,2022.

【8】庞智勇.Solid-Grinded Cocrystals of Acridine and 3,5-Dinitrobenzoic Acid: A Cocrystal with Strong Cocrystallization Ability and Two-Photon Excited Fluorescence Property. The Journal of Physical Chemistry C , 126:13881,2022.

【9】冀子武.Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structuresSuperlattices Microstruct,2022.

【10】冀子武.荧光法测定半导体禁带宽度的探讨物 理 学 报,2022.

【11】冀子武.Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaNJournal of Luminescence,2022.

【12】屈尚达.Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layerChin. Phys. B,2022.

【13】时凯居.Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells. Materials Express, 11:2033,2021.

【14】李睿.Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures. Superlattices and Microstructures, 160,2021.

【15】李睿.Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*. Chin. Phys. B, 30,2021.

【16】冀子武.N型掺杂ZnSe/BeTeⅡ型量子阱中空间间接带电激子跃迁发光的直接证据人 工 晶 体 学 报,2021.

【17】时凯居.Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction. JOURNAL OF LUMINESCENCE Journal, 223,2020.

【18】时凯居.Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure. Physica E-Low-Dimensional Systems & Nanostructures, 119,2020.

【19】李长富.Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate. Scientific Reports, 10,2020.

【20】李长富."Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation. Materials Express, 10:140,2020.

【21】徐明升, 徐现刚, 冀子武 and 李长富.Photoluminescence properties of blue and green multiple InGaN/GaN quantum wellsChin. Phys. B,2019.

【22】冀子武, 徐明升, 徐现刚 and 徐兴连.Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars. Journal of Luminescence, 203:216,2018.

【23】魏志贤, 冀子武, 庞智勇, 韩圣浩 and 戴成虎.Room temperature ferromagnetic and optical properties of rare earth Sm-doped tris(8-hydroxyquinoline) gallium thin films. Thin Solid Films, 648:113,2018.

【24】冀子武.Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widthsScientific Reports,2017.

【25】徐明升, 冀子武, 徐现刚 and 吕海燕.Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs. Materials Express, 7:523,2017.

【26】冀子武, 庞智勇, 韩圣浩 and 魏志贤.Tetramer bis-(8-hydroxyquinoline) Zinc Crystals Prepared by Physical Vapor Deposition Method. Crystal Research and Technology, 52,2017.

【27】徐明升, 冀子武, 徐现刚 and 李建飞.W-shaped"" injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substra. Optics Express, 25,2017.

【28】冀子武, 庞智勇, 徐现刚, 徐明升 and 李建飞.Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs. Chinese Physics B, 26,2017.

【29】冀子武, 王雪林, 徐现刚 and 王强.Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs. Applied Surface Science, 410:196,2017.

【30】胡季帆, 秦宏伟, 周广军, 冀子武 and 谢继浩.Light Control of Ferromagnetism in ZnO Films on Pt Substrate at Room Temperature. scientific reports, 7,2017.

【31】冀子武, 庞智勇, 徐现刚 and 李建飞.Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 11:184,2017.

【32】徐现刚 and 冀子武.Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodesMaterials Express,2016.

【33】Lü, Haiyan.Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells. CHINESE OPTICS LETTERS, 14:106,2016.

【34】冀子武.Temperature dependent current–voltage curves study of GaN-based blue light-emitting diodeMATER EXPRESS,2016.

【35】冀子武.Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wellsCHINESE OPTICS LETTERS,2016.

【36】冀子武.Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wellsPhysica E,2016.

【37】冀子武.Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPEChinese Physics B,2015.

【38】冀子武.Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDsSuperlattices and Microstructures,2015.

【39】郑雨军 and 冀子武.Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wellsChinese Physics B,2015.

【40】肖洪地, 冀子武 and 马瑾.Porosity-induced relaxation of strains at different depth of nanoporous GaN stuided using the Z-scan of Raman spectroscopy. JOURNAL OF ALLOYS AND COMPOUNDS, 626:154,2015.

【41】Wang Xue-Song.Internal quantum efficiency of InGaN/GaN multiple quantum well. ACTA PHYSICA SINICA, 63:127801-1-127801-7,2014.

【42】冀子武 and 徐现刚.关于 InGaN/GaN 多量子阱结构内量子效率的研究 物 理 学 报,2014.

【43】冀子武, 肖洪地 and 徐现刚.Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching CHIN. PHYS. LETT.,2014.

【44】肖洪地, 徐现刚 and 冀子武.Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells Physica E,2013.

【45】Yin, Zhengmao.Light transmission enhancement from hybrid ZnO micro-mesh and nanorod arrays with application to GaN-based light-emitting diodes. Optics Express, 21:28531-28542,2013.

【46】冀子武.Green and blue emissions in phase-separated InGaN quantum wells. Journal of applied physics, 114:163525-1,2013.

【47】冀子武 and 徐现刚.Effect of reactor pressure upon photoluminescence properties of ZnTe homoepitaxial layer. OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS, 7:730,2013.

【48】肖洪地 and 冀子武.Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells. Journal of applied physics, 114:093508-1,2013.

【49】肖洪地, 刘建强, 栾彩娜, 冀子武 and 裴海燕.Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition. JOURNAL OF ALLOYS AND COMPOUNDS, 563:72,2013.

【50】肖洪地, 郑雨军, 徐现刚 and 冀子武.Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates. Thin Solid Films, 536:240,2013.

【51】赵明文, 徐现刚 and 冀子武.Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPEPhys. Status Solidi A,2012.

【52】冀子武.Fabrication of Non-Stoichiometric Titanium Dioxide by Spark Plasma Sintering and Its Thermoelectric PropertiesMater. Trans.,2012.

【53】刘建强, 栾彩娜, 冀子武, 肖洪地 and 崔积适.Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers . Applied Physics Letters, 100:213101,2012.

【54】梅良模, 颜世申, 冀子武, 陈延学 and 刘国磊.Growth and photoluminescence properties of inclined ZnO and ZnCoO thin _lms on SrTiO3(110) substrates. Chinese Physics B, 21:057801-1,2012.

【55】冀子武.Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surfaceNucl. Instrum. Meth. B,2012.

【56】冀子武.Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells. Optics Express, 20:3932,2012.

【57】冀子武.The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon CarbideAdv. Mater. Res.,2012.

【58】冀子武.Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperatureChinese Physics B,2012.

【59】冀子武.Annealing effect and photoluminescence properties in Tm+-implanted ZnO crystalNucl. Instrum. Meth. B,2012.

【60】冀子武.A weak electron transporting material with high triplet energy and thermal stability via a super twisted structure for high efficient blue electrophosphorescent devices《J. Mater. Chem.》,2011.

【61】Optical properties of exciton and charged exciton in undoped ZnSe/BeTe type-II quantum wells under high magnetic fields，Acta. Phys. Sin-Ch. Ed.. Acta. Phys. Sin-Ch. Ed, 60:047805,2011.

【62】郑雨军 and 冀子武.超强磁场下非掺杂ZnSe/BeTe II型量子阱中激子和带电激子的光学特性物理 学 报 Acta Phys. Sin.,2011.

【63】郑雨军 and 冀子武.ZnSe/BeTe II型量子阱中界面结构对发光特性的影响物理 学 报 Acta Phys. Sin.,2010.

【64】冀子武.Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells. Chin. Phys. B, 19:117303-1,2010.

【65】Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells. Chin. Phys. B, 19:117303,2010.

【66】Interface structure effects on optical property of undoped ZnSe/BeTe type-ΙΙ quantum wells. Acta. Phys. Sin-Ch. Ed, 59:7986,2010.

【67】冀子武 and 郑雨军.Statistical properties of single molecule under stochastic gating. J. At. Mol. Sci., 1:280,2010.

【68】Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density. Semicond. Sci. Technol., 24:095016,2009.

【69】冀子武.Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density. Semiconductor Science and Technology, 24:095016,2009.

【70】冀子武 and 郑雨军.Photon Counting Statistics of Single Molecules in Solid MatrixJ Chem Phys,2009.

【71】Spatially direct charged exciton photoluminescence in undoped ZnSe/BeTe type-II quantum wells. Appl. Phys. Lett., 92:093107,2008.

【72】Magnetic field effect of charged excitons in n-doped ZnSe/BeTe type-II quantum wells. Acta. Phys. Sin-Ch. Ed., 57:6609-05,2008.

【73】冀子武.掺杂ZnSe/BeTe II型量子阱结构中带电激子的磁场效应. ACTA PHYSICA SINICA, 57:6609,2008.

【74】Optical property of modulated n-doped ZnSe/BeTe type-II quantum wells. Acta. Phys. Sin-Ch. Ed., 57:3260-07,2008.

【75】Built-in electric field and a new type of charged excitons observed in modulation-doped ZnSe/BeTe type- II quantum well. Acta. Phys. Sin-Ch. Ed., 87:1214-06,2008.

【76】冀子武.Optical property of modulation n-doped ZnSe/BeTe type-ΙΙ quantum wellsActa Phys. Sin.,2008.

【77】冀子武.Spatially direct charged exciton photoluminescence in undoped ZnSe/BeTe type-II quantum wellsAppl. Phys. Lett.,2008.

【78】冀子武.Built-in electric field and a new type of charged excitons realized in modulation-doped ZnSe/BeTe type-ΙΙ quantum wellActa Phys. Sin.,2008.

【79】Optical de Haas oscillations of charged excitons in type-II ZnSe/BeTe quantum wells. J. Phys.: Conf. Ser., 51:427-430,2006.

【80】lectric- and magnetic- field effects on the radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells. Sci. Technol., 21:87,2006.

【81】Spin dependent transitions of charged excitons in type-II quantum wells. Physica E, 22:632,2004.