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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Release time:2019-04-14
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Affiliation of Author(s):
物理学院
Journal:
Journal of applied physics
All the Authors:
Meng lingguo
First Author:
linzhaojun
Indexed by:
Unit Twenty Basic Research
Document Code:
lw-96709
Volume:
109
Issue:
7
Page Number:
074512-1
Translation or Not:
no
Date of Publication:
2011-04-08