【1】Jiang, Guangyuan.Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack. SOLID-STATE ELECTRONICS, 201,2023.

【2】王鸣雁.Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fTIEEE Electron Device Letters,2023.

【3】周衡.Study on the frequency characteristics of split-gate AlGaN/GaN HFETsModern Physics Letters B,2023.

【4】王鸣雁.A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETsIEEE Transactions on Electron Devices:1-5,2023.

【5】周衡.Study of electrical transport properties of GaN-based side-gate heterostructure transistorsApplied Physics Letters,2022.

【6】王鸣雁.Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETsIEEE Electron Device Letters,2022.

【7】刘阳.A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applicationsMicro and Nanostructures,2022.

【8】杨勇雄.Influence of Polarization Coulomb Field Scattering on the Sub-60 mV/dec Switching of AlGaN/GaN HFETs. IEEE Transactions on Electron Devices, 69:63,2022.

【9】刘阳.A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate. AIP ADVANCES, 12,2022.

【10】Liu, Yan.Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures. MICROELECTRONIC ENGINEERING, 247,2021.

【11】李亚萍.An Artificial Neural Network Assisted Optimization System for Analog Design Space ExplorationIEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS:2640,2020.

【12】李云鹏.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 24:208,2018.

【13】姜光远.The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length. Solid-State Electronics, 186,2021.

【14】姜光远.The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors. Applied Physics A: Materials Science and Processing, 127,2021.

【15】刘阳.A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology. SCIENTIFIC REPORTS, 11,2021.

【16】姜光远.The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 156,2021.

【17】姜光远.The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors. Physica E-Low-Dimensional Systems & Nanostructures, 127,2021.

【18】杨勇雄.Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method. AIP ADVANCES, 11,2021.

【19】李云鹏.Ambipolar SnO<inf>x</inf>thin-film transistors achieved at high sputtering power. Applied Physics Letters, 27,2018.

【20】李云鹏.Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays. IEEE Transactions on Electron Devices, 66:950,2019.

【21】崔鹏.Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors. Physica E-Low-Dimensional Systems & Nanostructures, 119,2020.

【22】李亚萍.An Artificial Neural Network Assisted Optimization System for Analog Design Space Exploration. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 39:2640,2020.

【23】杨勇雄.Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I-V Characteristics. ELECTRONICS, 9,2020.

【24】姜光远.Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors. AIP ADVANCES, 10,2020.

【25】Cheng Aijie and cuipeng.Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistorsPhysica E: Low-dimensional Systems and Nanostructures ,2020.

【26】王永.An artificial neural network assisted optimization system for analog design space explorationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,2020.

【27】Meng lingguo, linzhaojun and Xing Jianping.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【28】Meng lingguo, Xing Jianping and linzhaojun.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon. Applied physics letters, 96:191501,2010.

【29】linzhaojun and 杨铭.Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor. Journal of applied physics, 119:224501,2016.

【30】linzhaojun and 杨铭.Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs. IEEE Transactions on Electron Devices, 63:1471,2016.

【31】linzhaojun, fengzhenyu, zhanjinhua and 代鹏程.Band-gap tunable (Cu2Sn)x/3Zn1-xS nanoparticles for solar cells. CHEM COMMUN, 46:5749,2010.

【32】Cheng Aijie, linzhaojun and cuipeng.Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs. scientific reports, 8,2018.

【33】linzhaojun, Cheng Aijie and cuipeng.Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors. Scientific Reports, 8,2018.

【34】linzhaojun and cuipeng.Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors. Applied Physics A-Materials Science & Processing, 124,2018.

【35】xinqian, Zhou Li, yangzaixing, linzhaojun, wangqingpu, Song A M and liyunpeng.Ambipolar SnOx thin-film transistors achieved at high sputtering power. Applied physics letters, 112,2018.

【36】Song A M, Yiming Wang, linzhaojun, Zhou Li, xinqian and liyunpeng.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 39:208,2018.

【37】linzhaojun, Cheng Aijie and 付晨.The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation. Applied Physics A-Materials Science & Processing, 124,2018.

【38】Cheng Aijie, linzhaojun and cuipeng.Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors. scientific reports, 8,2018.

【39】linzhaojun and cuipeng.Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS, 122,2017.

【40】linzhaojun and 刘艳.Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 26,2017.

【41】linzhaojun and 刘艳.Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors. AIP Advances, 7,2017.

【42】linzhaojun and cuipeng.A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 110:289,2017.

【43】Cheng Aijie, linzhaojun and liuhuan.Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 103:113,2017.

【44】linzhaojun, Cheng Aijie and cuipeng.Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs. IEEE Transactions on Electron Devices, 64:1038,2017.

【45】linzhaojun and cuipeng.Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors. Chinese Physics B, 26,2017.

【46】linzhaojun and 杨铭.Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 85:43,2015.

【47】yanshishen, linzhaojun, Shishou Kang, Yanxue Chen, liuguolei, meiliangmo and tianyufeng.Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctionsScientific Reports,2015.

【48】linzhaojun and 付晨.Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 111:806,2017.

【49】linzhaojun and 杨铭.Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering. ？IEEE TRANSACTIONS ON ELECTRON DEVICES, 63:3908,2016.

【50】linzhaojun and 杨铭.Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors. Chinese Physics B, 24:117103,2015.

【51】linzhaojun and 赵景涛.Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Journal of Semiconductors, 35:124003,2014.

【52】linzhaojun and Meng lingguo.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.

【53】xiaohongdi, linzhaojun, Ma Jin, Fujian Zong and zhangxijian.Thermal stability of GaN powders in the flowing stream of N2 gas. Materials Chemistry and Physics, 106:5,2007.

【54】linzhaojun.Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 91:173507 -1,2007.

【55】linzhaojun and Meng lingguo.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.

【56】linzhaojun and 赵景涛.Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes. APPLIED PHYSICS LETTERS, 105,2014.

【57】linzhaojun, Cheng Aijie and cuipeng.Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors. ？Superlattices and Microstructures , 100:358,2016.

【58】linzhaojun and 刘艳.The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-effect Transistors. ？Journal of the Korean Physical Society, 68:883,2016.

【59】linzhaojun and 刘艳.Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Modern Physics Letters B, 30:1650411,2016.

【60】linzhaojun and 栾崇彪.Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors. Journal of Semiconductors, 35,2014.

【61】linzhaojun and 赵景涛.A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures,, 79:21,2014.

【62】linzhaojun and 于英霞.The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Journal of Semiconductors, 35:124007,2014.

【63】linzhaojun and 赵景涛.Effects of GaN cap layer thickness on an AlN/GaN heterostructure. Chinese Physics B, 23:127104,2014.

【64】linzhaojun and 周阳.Analysis of interface trap states in InAlN/AlN/GaN heterostructures. Semiconductor Science and Technology, 29,2014.

【65】linzhaojun and 栾崇彪.Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS, 116,2014.

【66】linzhaojun and Meng lingguo.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.

【67】linzhaojun and Meng lingguo.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS, 112:054513,2012.

【68】linzhaojun and Meng lingguo.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . APPLIED PHYSICS LETTERS, 101:113501,2012.

【69】linzhaojun, Xing Jianping and Meng lingguo.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【70】linzhaojun and 于英霞.Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. AIP Advances, 3,2013.

【71】linzhaojun and 曹芝芳.Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 22,2012.

【72】linzhaojun.Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes. Chinese Physics B, 21:017103-1,2012.

【73】linzhaojun.Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures. Chinese Physics B, 18:3980,2009.

【74】Xing Jianping, linzhaojun and Meng lingguo.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon . Applied physics letters, 96:191501-1,2010.

【75】linzhaojun.Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures. Journal of Semiconductors, 30:102003-1,2009.

【76】linzhaojun and Meng lingguo.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.

【77】linzhaojun and xiaohongdi.Thermal Stability of Strained AlGaN/GaN Heterostructures. chinese physics letters, 23:1900,2006.

【78】linzhaojun.Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions. APPLIED PHYSICS LETTERS, 82:364,2003.

【79】linzhaojun and Meng lingguo.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.

【80】linzhaojun and Meng lingguo.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. JOURNAL OF APPLIED PHYSICS, 109:074512-1,2011.

【81】linzhaojun and Meng lingguo.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. APPLIED PHYSICS LETTERS, 99:123504,2011.

【82】linzhaojun and Meng lingguo.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. APPLIED PHYSICS LETTERS, 98:123512-1,2011.

【83】linzhaojun.Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer. ELECTRON LETTERS, 39:1412,2003.

【84】xiaohongdi, maohongzhi and linzhaojun.Effect of high temperature annealing on strain and band gap of GaN nanoparticles . Chinese Physics B, 8:086106-1,2010.

【85】xiaohongdi, luancaina, Ma Jin, linzhaojun, Fujian Zong and zhangxijian.采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜. 《功能材料》, v 37:1,2006.

【86】linzhaojun.The influence of Schottky contact metals on the strain of AlGaN barrier layers. JOURNAL OF APPLIED PHYSICS, 103:044503 -1,2008.

【87】xiaohongdi, Jianqiang Liu and linzhaojun.Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates. Vacuum, 83:1393,2009.

【88】linzhaojun.Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures. JOURNAL OF APPLIED PHYSICS, 99,2005.

【89】xiaohongdi, linzhaojun, Ma Jin and Fujian Zong.Thermal stability of GaN powders investigated by XRD, XPS, PL, TEM, and FT-IR. JOURNAL OF ALLOYS AND COMPOUNDS, 465:340,2008.

【90】linzhaojun.Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 84:1585,2004.

【91】linzhaojun and 栾崇彪.Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors. Applied physics A, 116:2065,2014.

【92】linzhaojun and 赵景涛.Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes. Applied Physics A: Materials Science and Processing, 121:1271,2015.

【93】linzhaojun and 杨铭.Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors. Journal of Physics and Chemistry of Solids, 123:223,2018.

【94】linzhaojun, Cheng Aijie and 付晨.A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 113:160,2018.

【95】tianyufeng, linzhaojun, Shishou Kang, Yanxue Chen, liuguolei, meiliangmo and yanshishen.Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions. Scientific Reports, 5:14249,2015.

【96】linzhaojun and 于英霞.Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor. Chinese Physics B, 22,2012.

【97】linzhaojun and 栾崇彪.Influence of polarization Coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors. Physica E, 62:76,2014.

【98】linzhaojun and 赵景涛.A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors. APPLIED PHYSICS LETTERS, 107:113502,2015.

【99】linzhaojun and 杨铭.Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor. Journal of applied physics, 119:224501,2016.

【100】linzhaojun and 杨铭.Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs. IEEE Transactions on Electron Devices, 63:1471,2016.

【101】linzhaojun, fengzhenyu, zhanjinhua and 代鹏程.Band-gap tunable (Cu2Sn)x/3Zn1-xS nanoparticles for solar cells. CHEM COMMUN, 46:5749,2010.

【102】linzhaojun, Shishou Kang, Yanxue Chen, liuguolei, meiliangmo, tianyufeng and yanshishen.Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctionsscientific reports,2015.

【103】linzhaojun and 杨铭.Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering. ？IEEE TRANSACTIONS ON ELECTRON DEVICES, 63:3908,2016.

【104】linzhaojun, Xing Jianping and Meng lingguo.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【105】Xing Jianping, linzhaojun and Meng lingguo.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon . Applied physics letters, 96:191501-1,2010.

【106】maohongzhi, linzhaojun and xiaohongdi.Effect of high temperature annealing on strain and band gap of GaN nanoparticles . Chinese Physics B, 8:086106-1,2010.

【107】Jianqiang Liu, linzhaojun and xiaohongdi.Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates. Vacuum, 83:1393,2009.

【108】linzhaojun and 杨铭.Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering. ？IEEE TRANSACTIONS ON ELECTRON DEVICES, 63:3908,2016.

【109】linzhaojun, Cheng Aijie and cuipeng.Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors. ？Superlattices and Microstructures , 100:358,2016.

【110】linzhaojun and 刘艳.The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-effect Transistors. ？Journal of the Korean Physical Society, 68:883,2016.

【111】linzhaojun and 刘艳.Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Modern Physics Letters B, 30:1650411,2016.

【112】Yanxue Chen, liuguolei, meiliangmo, yanshishen, linzhaojun, Shishou Kang and tianyufeng.Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions. scientific reports, 5:14249,2015.

【113】Cheng Aijie, linzhaojun and cuipeng.Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs. scientific reports, 8,2018.

【114】xinqian, Zhou Li, yangzaixing, linzhaojun, wangqingpu, Song A M and liyunpeng.Ambipolar SnOx thin-film transistors achieved at high sputtering power. Applied physics letters, 112,2018.

【115】Song A M, Yiming Wang, linzhaojun, Zhou Li, xinqian and liyunpeng.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 39:208,2018.

【116】Cheng Aijie, linzhaojun and cuipeng.Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors. scientific reports, 8,2018.

【117】linzhaojun and 杨铭.Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors. Journal of Physics and Chemistry of Solids, 123:223,2018.

【118】Ma Jin, linzhaojun, Fujian Zong, zhangxijian, luancaina and xiaohongdi.采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜. 《功能材料》, v 37:1,2006.

【119】Xing Jianping, linzhaojun and Meng lingguo.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon . Applied physics letters, 96:191501-1,2010.

【120】Jianqiang Liu, linzhaojun and xiaohongdi.Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates. Vacuum, 83:1393,2009.

【121】linzhaojun, Ma Jin, Fujian Zong and xiaohongdi.Thermal stability of GaN powders investigated by XRD, XPS, PL, TEM, and FT-IR. JOURNAL OF ALLOYS AND COMPOUNDS, 465:340,2008.

【122】linzhaojun, Cheng Aijie and cuipeng.Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs. IEEE Transactions on Electron Devices, 64:1038,2017.

【123】linzhaojun, Ma Jin, Fujian Zong, zhangxijian and xiaohongdi.Thermal stability of GaN powders in the flowing stream of N2 gas. Materials Chemistry and Physics, 106:5,2007.

【124】maohongzhi, linzhaojun and xiaohongdi.Effect of high temperature annealing on strain and band gap of GaN nanoparticles . Chinese Physics B, 8:086106-1,2010.

【125】Cheng Aijie, linzhaojun and liuhuan.Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 103:113,2017.

【126】linzhaojun and cuipeng.Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors. Journal of applied physics, 122,2017.

【127】Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors. Chinese Physics B, 24,2015.

【128】Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 85,2015.

【129】A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures,, 79,2014.

【130】A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 107,2015.

【131】Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors. Journal of Semiconductors, 35,2014.

【132】Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Journal of Semiconductors, 35,2014.

【133】The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Journal of Semiconductors, 35,2014.

【134】Effects of GaN cap layer thickness on an AlN/GaN heterostructure. Chinese Physics B, 23,2014.

【135】Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors. Applied physics A, 116,2014.

【136】Influence of polarization Coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors. Physica E, 62,2014.

【137】Analysis of interface trap states in InAlN/AlN/GaN heterostructures. Semiconductor Science and Technology, 29,2014.

【138】Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 116,2014.

【139】Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. AIP Advances, 3,2013.

【140】Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor. Chinese Physics B, 22,2012.

【141】Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 22,2012.

【142】linzhaojun, Xing Jianping and Meng lingguo.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【143】linzhaojun, Cheng Aijie and 付晨.The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation. Applied Physics A-Materials Science & Processing, 124,2018.

【144】linzhaojun and 刘艳.Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 26,2017.

【145】linzhaojun and cuipeng.Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors. Chinese Physics B, 26,2017.

【146】linzhaojun and 付晨.Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 111:806,2017.

【147】linzhaojun, Cheng Aijie and 付晨.A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 113:160,2018.

【148】linzhaojun and 刘艳.Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors. AIP Advances, 7,2017.

【149】linzhaojun and cuipeng.A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 110:289,2017.

【150】linzhaojun and cuipeng.Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors. Applied Physics A-Materials Science & Processing, 124,2018.

【151】linzhaojun.Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures. Journal of Semiconductors, 30:102003-1,2009.

【152】Meng lingguo and linzhaojun.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.

【153】xiaohongdi and linzhaojun.Thermal Stability of Strained AlGaN/GaN Heterostructures. chinese physics letters, 23:1900,2006.

【154】Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures. Applied physics letters, 84,2004.

【155】Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer. ELECTRON LETTERS, 39,2003.

【156】Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions. Applied physics letters, 82,2003.

【157】Meng lingguo and linzhaojun.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.

【158】Meng lingguo and linzhaojun.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.

【159】Meng lingguo and linzhaojun.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. Journal of applied physics, 109:074512-1,2011.

【160】Meng lingguo and linzhaojun.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. Applied physics letters, 99:123504,2011.

【161】Meng lingguo and linzhaojun.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 98:123512-1,2011.

【162】linzhaojun.Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures. Chinese Physics B, 18:3980,2009.

【163】linzhaojun.Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures. Applied physics letters, 91:173507 -1,2007.

【164】Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures. Journal of applied physics, 99,2005.

【165】linzhaojun.The influence of Schottky contact metals on the strain of AlGaN barrier layers. Journal of applied physics, 103:044503 -1,2008.

【166】Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Modern Physics Letters B, 30,2016.

【167】？Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ？Superlattices and Microstructures , 100,2016.

【168】Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors . Modern Physics Letters B, 30,2015.

【169】Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ？Superlattices and Microstructures, 100,2015.

【170】？Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ？Superlattices and Microstructures , 100,2015.

【171】？Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ？Superlattices and Microstructures , 100,2015.

【172】？Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering . ？IEEE TRANSACTIONS ON ELECTRON DEVICES, 63,2016.

【173】？Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor. ？JOURNAL OF APPLIED PHYSICS , 119,2016.

【174】？The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-effect Transistors . ？Journal of the Korean Physical Society, 68,2016.

【175】？？Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs . ？IEEE TRANSACTIONS ON ELECTRON DEVICES, 63,2016.

【176】Meng lingguo and linzhaojun.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . Applied physics letters, 101:113501,2012.

【177】Meng lingguo and linzhaojun.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.

【178】Meng lingguo and linzhaojun.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 112:054513,2012.

【179】Meng lingguo and linzhaojun.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.

【180】linzhaojun.Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes. Chinese Physics B, 21:017103-1,2012.

【181】linzhaojun, Cheng Aijie and cuipeng.Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors. scientific reports, 8,2018.