林兆军

Professor

Supervisor of Doctorate Candidates Supervisor of Master's Candidates

E-Mail:   linzj@sdu.edu.cn

Personal Profile

Personal Experience

  • 2016.04 -- Now

    山东大学集成电路学院  , 教授 , 在职

  • 2003.12 -- 2016.04

    山东大学物理学院  , 教授

  • 2002.03 -- 2003.08

    美国俄亥俄州立大学  , 电子工程系 , 从事了 AlGaN/GaN 异质结场效应晶体管的研究工作。

  • 2000.09 -- 2002.02

    美国西北大学  , 量子器件研究中心 , 开展GaInAs/AlInAs 量子级联激光、GaN 基蓝激光器和发光管研究。

  • 1999.09 -- 2000.08

    加拿大McMaster大学  , 电子工程系 , 开展 InGaAsP-InP多量子阱激光器的研究工作。

  • 1997.09 -- 1999.09

    北京大学微电子所  , 博士后 , 从事 GaN 电子器件的研究。

  • 1988.08 -- 1994.08

    河北大学电子系  , 教师

Teaching Information

Undergraduate Course Name Semester Credit Course Number

半导体器件理论

Autumn Term

3.0

0230007

半导体物理与器件

Autumn Term

3.0

0230080

专业论文写作

Spring Term

1.0

0230072

半导体器件理论

Autumn Term

3.0

0230007

专业论文写作

Spring Term

1.0

0230072

半导体器件理论

Autumn Term

3.0

0230007

半导体器件

Spring Term

3.0

sd04030200

专业论文写作

Spring Term

1.0

0230072

专业论文写作

Spring Term

1.0

0230072

微电子类前沿讲座

Spring Term

1.0

sd04030370

半导体器件

Autumn Term

3.0

sd04030200

半导体器件理论

Autumn Term

3.0

0230007

微电子类前沿讲座

Spring Term

1.0

sd04030370

半导体器件理论

Autumn Term

3.0

0230007

半导体器件理论

Autumn Term

3.0

0230007

半导体器件理论

Autumn Term

3.0

0230007

半导体器件

Autumn Term

3.0

sd04030200

微电子类前沿讲座

Autumn Term

1.0

sd04030370

半导体器件理论

Autumn Term

3.0

0230007

半导体器件

Spring Term

3.0

sd04030200

微电子类前沿讲座

Spring Term

1.0

sd04030370

微电子类前沿讲座

Autumn Term

1.0

sd04030370

专业英语(博)

Spring Term

2.0

0230034

半导体器件理论

Autumn Term

3.0

0230007

半导体器件理论

Autumn Term

3.0

0230007

低维材料与器件

Autumn Term

2.0

0230008

低维材料与器件

Autumn Term

2.0

0230008

半导体器件物理

4.0

sd01031190

Research Direction

Name Introduction

开发 SiC、GaN、GaO 基射频、功率器件制备的关键技术; 形成功率半导体器件的测试、建模、评估理论⽅法及技术体系。

开发 SiC、GaN、GaO 基射频、功率器件制备的关键技术; 形成功率半导体器件的测试、建模、评估理论⽅法及技术体系。

Research Project

Project Name Project Cycle

GFJG-KM20210018

2021/10/25,2021/11/30

增强型GaN电子器件制备研究

2020/09/01,2021/09/30

AlGaN/GaN HFET器件特性测试分析

2020/07/01,2021/05/31

纳米材料表面生化修饰与POPs的选择性富集

2007/07/01,2011/12/31

极化库仑场散射应用于GaN基异质结场效应晶体管器件建模的研究

2019/08/16,2023/12/31

增强型GaN电子器件变温测试研究

2019/04/16,2019/12/31

化学液相技术制造(ZnS)x(Cu2ZnSnS4)1-x复合纳米晶太阳能电池的研究

2011/01/01,2013/12/31

ZnSe/BeTeII型量子结构中I型跃迁、II型跃迁的物理机制及二者的相互关联

2008/01/01,2008/12/31

无线电综合管理平台(微电子材料与器件研发中心)

2010/10/17,2011/10/16

微电子学院科研组织建设项目

2018/01/01,2018/12/01

GaN微波HEMT器件定制服务合同

2017/12/21,2018/06/30

新型AlGaN/GaN开关研制

2017/06/20,2018/06/20

微电子学院科研组织建设项目

2017/01/01,2017/12/01

大电流增强型GaN基HEMT器件工艺研发

2016/12/20,2021/12/31

极化库仑场散射与GaN基异质结场效应晶体管源、漏寄生串联电阻关联关系研究

2015/08/17,2019/12/31

基于选择区域生长的非合金欧姆接触GaNHEMT器件基础研究

2015/03/01,2017/07/31

AIN/GaN HFET器件中散射机理研究

2013/01/01,2015/12/31

AlGaN/GaN 异质结场效应晶体管中应变极化梯度库仑场散射机制研究

2011/12/08,2015/12/31

AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制

2011/08/31,2015/12/31

肖特基接触金属对ALGaN势垒层应变影响研究

2008/01/01,2010/12/31

GaN基氢气探测器研究

2007/01/01,2008/12/31

Main Papers

【1】周衡.Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistorsGuti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics,2023.

【2】王鸣雁.Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETsApplied Physics Letters,2024.

【3】王鸣雁.Bias-dependent electron velocity and short-channel effect in scaling sub-100?nm InAlN/GaN HFETsApplied Physics Letters,2024.

【4】范宝财.Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistorsAIP Advances,2024.

【5】王鸣雁.Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETsIEEE ACCESS,2024.

【6】Jiang, Guangyuan.Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack. SOLID-STATE ELECTRONICS, 201,2023.

【7】王鸣雁.Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fTIEEE Electron Device Letters,2023.

【8】周衡.Study on the frequency characteristics of split-gate AlGaN/GaN HFETsModern Physics Letters B,2023.

【9】王鸣雁.A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETsIEEE Transactions on Electron Devices:1-5,2023.

【10】周衡.Study of electrical transport properties of GaN-based side-gate heterostructure transistorsApplied Physics Letters,2022.

【11】王鸣雁.Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETsIEEE Electron Device Letters,2022.

【12】刘阳.A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applicationsMicro and Nanostructures,2022.

【13】杨勇雄.Influence of Polarization Coulomb Field Scattering on the Sub-60 mV/dec Switching of AlGaN/GaN HFETs. IEEE Transactions on Electron Devices, 69:63,2022.

【14】刘阳.A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate. AIP ADVANCES, 12,2022.

【15】Liu, Yan.Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures. MICROELECTRONIC ENGINEERING, 247,2021.

【16】李亚萍.An Artificial Neural Network Assisted Optimization System for Analog Design Space ExplorationIEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS:2640,2020.

【17】李云鹏.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 24:208,2018.

【18】姜光远.The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length. Solid-State Electronics, 186,2021.

【19】姜光远.The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors. Applied Physics A: Materials Science and Processing, 127,2021.

【20】刘阳.A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology. SCIENTIFIC REPORTS, 11,2021.

【21】姜光远.The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 156,2021.

【22】姜光远.The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors. Physica E-Low-Dimensional Systems & Nanostructures, 127,2021.

【23】杨勇雄.Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method. AIP ADVANCES, 11,2021.

【24】李云鹏.Ambipolar SnO<inf>x</inf>thin-film transistors achieved at high sputtering power. Applied Physics Letters, 27,2018.

【25】李云鹏.Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays. IEEE Transactions on Electron Devices, 66:950,2019.

【26】崔鹏.Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors. Physica E-Low-Dimensional Systems & Nanostructures, 119,2020.

【27】李亚萍.An Artificial Neural Network Assisted Optimization System for Analog Design Space Exploration. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 39:2640,2020.

【28】杨勇雄.Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I-V Characteristics. ELECTRONICS, 9,2020.

【29】姜光远.Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors. AIP ADVANCES, 10,2020.

【30】Cheng Aijie and cuipeng.Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistorsPhysica E: Low-dimensional Systems and Nanostructures ,2020.

【31】王永.An artificial neural network assisted optimization system for analog design space explorationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,2020.

【32】Meng lingguo, linzhaojun and Xing Jianping.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【33】Meng lingguo, Xing Jianping and linzhaojun.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon. Applied physics letters, 96:191501,2010.

【34】linzhaojun and 杨铭.Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor. Journal of applied physics, 119:224501,2016.

【35】linzhaojun and 杨铭.Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs. IEEE Transactions on Electron Devices, 63:1471,2016.

【36】linzhaojun, fengzhenyu, zhanjinhua and 代鹏程.Band-gap tunable (Cu2Sn)x/3Zn1-xS nanoparticles for solar cells. CHEM COMMUN, 46:5749,2010.

【37】Cheng Aijie, linzhaojun and cuipeng.Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs. scientific reports, 8,2018.

【38】linzhaojun, Cheng Aijie and cuipeng.Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors. Scientific Reports, 8,2018.

【39】linzhaojun and cuipeng.Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors. Applied Physics A-Materials Science & Processing, 124,2018.

【40】xinqian, Zhou Li, yangzaixing, linzhaojun, wangqingpu, Song A M and liyunpeng.Ambipolar SnOx thin-film transistors achieved at high sputtering power. Applied physics letters, 112,2018.

【41】Song A M, Yiming Wang, linzhaojun, Zhou Li, xinqian and liyunpeng.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 39:208,2018.

【42】linzhaojun, Cheng Aijie and 付晨.The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation. Applied Physics A-Materials Science & Processing, 124,2018.

【43】Cheng Aijie, linzhaojun and cuipeng.Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors. scientific reports, 8,2018.

【44】linzhaojun and cuipeng.Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS, 122,2017.

【45】linzhaojun and 刘艳.Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 26,2017.

【46】linzhaojun and 刘艳.Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors. AIP Advances, 7,2017.

【47】linzhaojun and cuipeng.A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 110:289,2017.

【48】Cheng Aijie, linzhaojun and liuhuan.Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 103:113,2017.

【49】linzhaojun, Cheng Aijie and cuipeng.Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs. IEEE Transactions on Electron Devices, 64:1038,2017.

【50】linzhaojun and cuipeng.Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors. Chinese Physics B, 26,2017.

【51】linzhaojun and 杨铭.Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 85:43,2015.

【52】yanshishen, linzhaojun, Shishou Kang, Yanxue Chen, liuguolei, meiliangmo and tianyufeng.Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctionsScientific Reports,2015.

【53】linzhaojun and 付晨.Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 111:806,2017.

【54】linzhaojun and 杨铭.Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering. ?IEEE TRANSACTIONS ON ELECTRON DEVICES, 63:3908,2016.

【55】linzhaojun and 杨铭.Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors. Chinese Physics B, 24:117103,2015.

【56】linzhaojun and 赵景涛.Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Journal of Semiconductors, 35:124003,2014.

【57】linzhaojun and Meng lingguo.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.

【58】xiaohongdi, linzhaojun, Ma Jin, Fujian Zong and Xijian Zhang.Thermal stability of GaN powders in the flowing stream of N2 gas. Materials Chemistry and Physics, 106:5,2007.

【59】linzhaojun.Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 91:173507 -1,2007.

【60】linzhaojun and Meng lingguo.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.

【61】linzhaojun and 赵景涛.Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes. APPLIED PHYSICS LETTERS, 105,2014.

【62】linzhaojun, Cheng Aijie and cuipeng.Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors. ?Superlattices and Microstructures , 100:358,2016.

【63】linzhaojun and 刘艳.The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-effect Transistors. ?Journal of the Korean Physical Society, 68:883,2016.

【64】linzhaojun and 刘艳.Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Modern Physics Letters B, 30:1650411,2016.

【65】linzhaojun and 栾崇彪.Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors. Journal of Semiconductors, 35,2014.

【66】linzhaojun and 赵景涛.A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures,, 79:21,2014.

【67】linzhaojun and 于英霞.The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Journal of Semiconductors, 35:124007,2014.

【68】linzhaojun and 赵景涛.Effects of GaN cap layer thickness on an AlN/GaN heterostructure. Chinese Physics B, 23:127104,2014.

【69】linzhaojun and 周阳.Analysis of interface trap states in InAlN/AlN/GaN heterostructures. Semiconductor Science and Technology, 29,2014.

【70】linzhaojun and 栾崇彪.Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS, 116,2014.

【71】linzhaojun and Meng lingguo.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.

【72】linzhaojun and Meng lingguo.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS, 112:054513,2012.

【73】linzhaojun and Meng lingguo.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . APPLIED PHYSICS LETTERS, 101:113501,2012.

【74】linzhaojun, Xing Jianping and Meng lingguo.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【75】linzhaojun and 于英霞.Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. AIP Advances, 3,2013.

【76】linzhaojun and 曹芝芳.Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 22,2012.

【77】linzhaojun.Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes. Chinese Physics B, 21:017103-1,2012.

【78】linzhaojun.Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures. Chinese Physics B, 18:3980,2009.

【79】Xing Jianping, linzhaojun and Meng lingguo.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon . Applied physics letters, 96:191501-1,2010.

【80】linzhaojun.Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures. Journal of Semiconductors, 30:102003-1,2009.

【81】linzhaojun and Meng lingguo.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.

【82】linzhaojun and xiaohongdi.Thermal Stability of Strained AlGaN/GaN Heterostructures. chinese physics letters, 23:1900,2006.

【83】linzhaojun.Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions. APPLIED PHYSICS LETTERS, 82:364,2003.

【84】linzhaojun and Meng lingguo.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.

【85】linzhaojun and Meng lingguo.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. JOURNAL OF APPLIED PHYSICS, 109:074512-1,2011.

【86】linzhaojun and Meng lingguo.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. APPLIED PHYSICS LETTERS, 99:123504,2011.

【87】linzhaojun and Meng lingguo.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. APPLIED PHYSICS LETTERS, 98:123512-1,2011.

【88】linzhaojun.Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer. ELECTRON LETTERS, 39:1412,2003.

【89】xiaohongdi, maohongzhi and linzhaojun.Effect of high temperature annealing on strain and band gap of GaN nanoparticles . Chinese Physics B, 8:086106-1,2010.

【90】xiaohongdi, luancaina, Ma Jin, linzhaojun, Fujian Zong and Xijian Zhang.采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜. 《功能材料》, v 37:1,2006.

【91】linzhaojun.The influence of Schottky contact metals on the strain of AlGaN barrier layers. JOURNAL OF APPLIED PHYSICS, 103:044503 -1,2008.

【92】xiaohongdi, Jianqiang Liu and linzhaojun.Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates. Vacuum, 83:1393,2009.

【93】linzhaojun.Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures. JOURNAL OF APPLIED PHYSICS, 99,2005.

【94】xiaohongdi, linzhaojun, Ma Jin and Fujian Zong.Thermal stability of GaN powders investigated by XRD, XPS, PL, TEM, and FT-IR. JOURNAL OF ALLOYS AND COMPOUNDS, 465:340,2008.

【95】linzhaojun.Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 84:1585,2004.

【96】linzhaojun and 栾崇彪.Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors. Applied physics A, 116:2065,2014.

【97】linzhaojun and 赵景涛.Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes. Applied Physics A: Materials Science and Processing, 121:1271,2015.

【98】linzhaojun and 杨铭.Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors. Journal of Physics and Chemistry of Solids, 123:223,2018.

【99】linzhaojun, Cheng Aijie and 付晨.A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 113:160,2018.

【100】tianyufeng, linzhaojun, Shishou Kang, Yanxue Chen, liuguolei, meiliangmo and yanshishen.Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions. Scientific Reports, 5:14249,2015.

【101】linzhaojun and 于英霞.Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor. Chinese Physics B, 22,2012.

【102】linzhaojun and 栾崇彪.Influence of polarization Coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors. Physica E, 62:76,2014.

【103】linzhaojun and 赵景涛.A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors. APPLIED PHYSICS LETTERS, 107:113502,2015.

【104】linzhaojun and 杨铭.Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor. Journal of applied physics, 119:224501,2016.

【105】linzhaojun and 杨铭.Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs. IEEE Transactions on Electron Devices, 63:1471,2016.

【106】linzhaojun, fengzhenyu, zhanjinhua and 代鹏程.Band-gap tunable (Cu2Sn)x/3Zn1-xS nanoparticles for solar cells. CHEM COMMUN, 46:5749,2010.

【107】linzhaojun, Shishou Kang, Yanxue Chen, liuguolei, meiliangmo, tianyufeng and yanshishen.Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctionsscientific reports,2015.

【108】linzhaojun and 杨铭.Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering. ?IEEE TRANSACTIONS ON ELECTRON DEVICES, 63:3908,2016.

【109】linzhaojun, Xing Jianping and Meng lingguo.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【110】Xing Jianping, linzhaojun and Meng lingguo.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon . Applied physics letters, 96:191501-1,2010.

【111】maohongzhi, linzhaojun and xiaohongdi.Effect of high temperature annealing on strain and band gap of GaN nanoparticles . Chinese Physics B, 8:086106-1,2010.

【112】Jianqiang Liu, linzhaojun and xiaohongdi.Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates. Vacuum, 83:1393,2009.

【113】linzhaojun and 杨铭.Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering. ?IEEE TRANSACTIONS ON ELECTRON DEVICES, 63:3908,2016.

【114】linzhaojun, Cheng Aijie and cuipeng.Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors. ?Superlattices and Microstructures , 100:358,2016.

【115】linzhaojun and 刘艳.The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-effect Transistors. ?Journal of the Korean Physical Society, 68:883,2016.

【116】linzhaojun and 刘艳.Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Modern Physics Letters B, 30:1650411,2016.

【117】Yanxue Chen, liuguolei, meiliangmo, yanshishen, linzhaojun, Shishou Kang and tianyufeng.Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions. scientific reports, 5:14249,2015.

【118】Cheng Aijie, linzhaojun and cuipeng.Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs. scientific reports, 8,2018.

【119】xinqian, Zhou Li, yangzaixing, linzhaojun, wangqingpu, Song A M and liyunpeng.Ambipolar SnOx thin-film transistors achieved at high sputtering power. Applied physics letters, 112,2018.

【120】Song A M, Yiming Wang, linzhaojun, Zhou Li, xinqian and liyunpeng.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 39:208,2018.

【121】Cheng Aijie, linzhaojun and cuipeng.Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors. scientific reports, 8,2018.

【122】linzhaojun and 杨铭.Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors. Journal of Physics and Chemistry of Solids, 123:223,2018.

【123】Ma Jin, linzhaojun, Fujian Zong, Xijian Zhang, luancaina and xiaohongdi.采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜. 《功能材料》, v 37:1,2006.

【124】Xing Jianping, linzhaojun and Meng lingguo.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon . Applied physics letters, 96:191501-1,2010.

【125】Jianqiang Liu, linzhaojun and xiaohongdi.Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates. Vacuum, 83:1393,2009.

【126】linzhaojun, Ma Jin, Fujian Zong and xiaohongdi.Thermal stability of GaN powders investigated by XRD, XPS, PL, TEM, and FT-IR. JOURNAL OF ALLOYS AND COMPOUNDS, 465:340,2008.

【127】linzhaojun, Cheng Aijie and cuipeng.Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs. IEEE Transactions on Electron Devices, 64:1038,2017.

【128】linzhaojun, Ma Jin, Fujian Zong, Xijian Zhang and xiaohongdi.Thermal stability of GaN powders in the flowing stream of N2 gas. Materials Chemistry and Physics, 106:5,2007.

【129】maohongzhi, linzhaojun and xiaohongdi.Effect of high temperature annealing on strain and band gap of GaN nanoparticles . Chinese Physics B, 8:086106-1,2010.

【130】Cheng Aijie, linzhaojun and liuhuan.Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 103:113,2017.

【131】linzhaojun and cuipeng.Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors. Journal of applied physics, 122,2017.

【132】Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors. Chinese Physics B, 24,2015.

【133】Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 85,2015.

【134】A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures,, 79,2014.

【135】A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 107,2015.

【136】Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors. Journal of Semiconductors, 35,2014.

【137】Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Journal of Semiconductors, 35,2014.

【138】The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Journal of Semiconductors, 35,2014.

【139】Effects of GaN cap layer thickness on an AlN/GaN heterostructure. Chinese Physics B, 23,2014.

【140】Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors. Applied physics A, 116,2014.

【141】Influence of polarization Coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors. Physica E, 62,2014.

【142】Analysis of interface trap states in InAlN/AlN/GaN heterostructures. Semiconductor Science and Technology, 29,2014.

【143】Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 116,2014.

【144】Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. AIP Advances, 3,2013.

【145】Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor. Chinese Physics B, 22,2012.

【146】Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 22,2012.

【147】linzhaojun, Xing Jianping and Meng lingguo.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.

【148】linzhaojun, Cheng Aijie and 付晨.The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation. Applied Physics A-Materials Science & Processing, 124,2018.

【149】linzhaojun and 刘艳.Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 26,2017.

【150】linzhaojun and cuipeng.Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors. Chinese Physics B, 26,2017.

【151】linzhaojun and 付晨.Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 111:806,2017.

【152】linzhaojun, Cheng Aijie and 付晨.A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 113:160,2018.

【153】linzhaojun and 刘艳.Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors. AIP Advances, 7,2017.

【154】linzhaojun and cuipeng.A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 110:289,2017.

【155】linzhaojun and cuipeng.Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors. Applied Physics A-Materials Science & Processing, 124,2018.

【156】linzhaojun.Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures. Journal of Semiconductors, 30:102003-1,2009.

【157】Meng lingguo and linzhaojun.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.

【158】xiaohongdi and linzhaojun.Thermal Stability of Strained AlGaN/GaN Heterostructures. chinese physics letters, 23:1900,2006.

【159】Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures. Applied physics letters, 84,2004.

【160】Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer. ELECTRON LETTERS, 39,2003.

【161】Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions. Applied physics letters, 82,2003.

【162】Meng lingguo and linzhaojun.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.

【163】Meng lingguo and linzhaojun.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.

【164】Meng lingguo and linzhaojun.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. Journal of applied physics, 109:074512-1,2011.

【165】Meng lingguo and linzhaojun.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. Applied physics letters, 99:123504,2011.

【166】Meng lingguo and linzhaojun.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 98:123512-1,2011.

【167】linzhaojun.Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures. Chinese Physics B, 18:3980,2009.

【168】linzhaojun.Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures. Applied physics letters, 91:173507 -1,2007.

【169】Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures. Journal of applied physics, 99,2005.

【170】linzhaojun.The influence of Schottky contact metals on the strain of AlGaN barrier layers. Journal of applied physics, 103:044503 -1,2008.

【171】Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Modern Physics Letters B, 30,2016.

【172】?Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ?Superlattices and Microstructures , 100,2016.

【173】Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors . Modern Physics Letters B, 30,2015.

【174】Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ?Superlattices and Microstructures, 100,2015.

【175】?Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ?Superlattices and Microstructures , 100,2015.

【176】?Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ?Superlattices and Microstructures , 100,2015.

【177】?Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering . ?IEEE TRANSACTIONS ON ELECTRON DEVICES, 63,2016.

【178】?Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor. ?JOURNAL OF APPLIED PHYSICS , 119,2016.

【179】?The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-effect Transistors . ?Journal of the Korean Physical Society, 68,2016.

【180】??Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs . ?IEEE TRANSACTIONS ON ELECTRON DEVICES, 63,2016.

【181】Meng lingguo and linzhaojun.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . Applied physics letters, 101:113501,2012.

【182】Meng lingguo and linzhaojun.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.

【183】Meng lingguo and linzhaojun.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 112:054513,2012.

【184】Meng lingguo and linzhaojun.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.

【185】linzhaojun.Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes. Chinese Physics B, 21:017103-1,2012.

【186】linzhaojun, Cheng Aijie and cuipeng.Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors. scientific reports, 8,2018.

Patent Works

Patent Name Introduction Date

一种基于ScAlN介质层的InAlN/GaN MIS-HEMT及其制备方法

2024/05/28

提高InAlN/GaN高电子迁移率晶体管电学性能的方法

2024/02/02

一种具有辅助栅结构的AlGaN/GaN开口栅异质结场效应晶体管及应用

可装配二维微等离子体阵列装置及其制备方法

2011/11/09

确定GaN 异质结场效应晶体管栅下势垒层应变的方法

2016/03/09

提高AlGaN/GaN异质结场效应晶体管线性度的方法

可装配二维微等离子体阵列装置及其制备方法

确定GaN 异质结场效应晶体管栅下势垒层应变的方法

2013/12/13