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Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures

Release time:2019-04-14
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Affiliation of Author(s):
物理学院
Journal:
Journal of Semiconductors
All the Authors:
Meng lingguo
First Author:
linzhaojun
Indexed by:
Unit Twenty Basic Research
Document Code:
lw-96784
Volume:
31
Issue:
8
Page Number:
084007-1
Translation or Not:
no
Date of Publication:
2010-08-30