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Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Applied Physics A-Materials Science & Processing
All the Authors:
linzhaojun
First Author:
cuipeng
Indexed by:
综合研究
Document Code:
23FFF41320F243FFAFA50330D569F6BB
Volume:
124
Issue:
5
Translation or Not:
no
Date of Publication:
2018-05-01