Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- Applied Physics A-Materials Science & Processing
- All the Authors:
- linzhaojun
- First Author:
- cuipeng
- Indexed by:
- 综合研究
- Document Code:
- 23FFF41320F243FFAFA50330D569F6BB
- Volume:
- 124
- Issue:
- 5
- Translation or Not:
- no
- Date of Publication:
- 2018-05-01