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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Chinese Physics B
Indexed by:
综合研究
Document Code:
lw-145401
Volume:
22
Issue:
4
Translation or Not:
no
Date of Publication:
2012-08-01