Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- IEEE Transactions on Electron Devices
- All the Authors:
- linzhaojun,Cheng Aijie
- First Author:
- cuipeng
- Indexed by:
- 综合研究
- Document Code:
- E2988FC1A9E8447E954EB10F064D7460
- Volume:
- 64
- Issue:
- 3
- Page Number:
- 1038
- Translation or Not:
- no
- Date of Publication:
- 2017-03-01