Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
- Journal:
- IEEE Transactions on Electron Devices
- First Author:
- 崔鹏
- All the Authors:
- 林兆军,程爱杰
- Document Code:
- E2988FC1A9E8447E954EB10F064D7460
- Volume:
- 64
- Issue:
- 3
- Page Number:
- 1038
- Translation or Not:
- No
- Date of Publication:
- 2017-03
- Release Time:
- 2019-04-14