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Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
scientific reports
All the Authors:
Cheng Aijie,linzhaojun
First Author:
cuipeng
Indexed by:
综合研究
Document Code:
6F146E0EDCBB4D39A65CB09F15ACC5F7
Volume:
8
Translation or Not:
no
Date of Publication:
2018-01-17