The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-effect Transistors
Release Time:2019-05-29
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- Institution:
- 微电子学院
- Title of Paper:
- The Role of Polarization Coulomb Field Scattering in the Electron Mobility of AlGaN/AlN/GaN Heterostructure Field-effect Transistors
- Journal:
- ？Journal of the Korean Physical Society
- First Author:
- 刘艳
- All the Authors:
- 林兆军
- Document Code:
- lw-183657
- Volume:
- 68
- Issue:
- 7
- Page Number:
- 883
- Translation or Not:
- No
- Date of Publication:
- 2016-03
- Release Time:
- 2019-05-29