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Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates

Release Time:2019-10-22
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Institution:
物理学院
Title of Paper:
Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates
Journal:
Vacuum
First Author:
肖洪地
All the Authors:
Jianqiang Liu,林兆军
Document Code:
lw-77690
Volume:
83
Issue:
11
Page Number:
1393
Translation or Not:
No
Date of Publication:
2009-07
Release Time:
2019-10-22