Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
Release time:2019-10-22
Hits:
- Affiliation of Author(s):
- 微电子学院
- Journal:
- ？IEEE TRANSACTIONS ON ELECTRON DEVICES
- All the Authors:
- linzhaojun
- First Author:
- 杨铭
- Indexed by:
- 综合研究
- Document Code:
- lw-183660
- Volume:
- 63
- Issue:
- 10
- Page Number:
- 3908
- Translation or Not:
- no
- Date of Publication:
- 2016-08-12