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Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

Release time:2019-10-22
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Affiliation of Author(s):
微电子学院
Journal:
?IEEE TRANSACTIONS ON ELECTRON DEVICES
All the Authors:
linzhaojun
First Author:
杨铭
Indexed by:
综合研究
Document Code:
lw-183660
Volume:
63
Issue:
10
Page Number:
3908
Translation or Not:
no
Date of Publication:
2016-08-12