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Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions

Release Time:2019-10-24
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Institution:
集成电路学院
Title of Paper:
Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions
Journal:
APPLIED PHYSICS LETTERS
First Author:
林兆军
All the Authors:
林兆军
Document Code:
lw-96753
Volume:
82
Issue:
24
Page Number:
364
Number of Words:
3000
Translation or Not:
No
Date of Publication:
2003-04
Release Time:
2019-10-24