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Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

Release time:2019-10-24
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Affiliation of Author(s):
物理学院
Journal:
Journal of Semiconductors
All the Authors:
linzhaojun
First Author:
linzhaojun
Document Code:
lw-96791
Volume:
30
Issue:
10
Page Number:
102003-1
Number of Words:
3000
Translation or Not:
no
Date of Publication:
2009-10-22