Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
Release time:2019-10-24
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- Affiliation of Author(s):
- 物理学院
- Journal:
- JOURNAL OF APPLIED PHYSICS
- All the Authors:
- linzhaojun,Meng lingguo
- First Author:
- linzhaojun
- Document Code:
- lw-137932
- Volume:
- 112
- Page Number:
- 054513
- Translation or Not:
- no
- Date of Publication:
- 2012-09-14
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