Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures
Release time:2019-10-24
Hits:
- Affiliation of Author(s):
- 物理学院
- Journal:
- APPLIED PHYSICS LETTERS
- All the Authors:
- linzhaojun
- First Author:
- linzhaojun
- Document Code:
- lw-79622
- Volume:
- 91
- Issue:
- 17
- Page Number:
- 173507 -1
- Number of Words:
- 3000
- Translation or Not:
- no
- Date of Publication:
- 2007-10-24