Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
Release time:2020-06-02
Hits:
- Affiliation of Author(s):
- 微电子学院
- Journal:
- Physica E: Low-dimensional Systems and Nanostructures
- All the Authors:
- Cheng Aijie
- First Author:
- cuipeng
- Indexed by:
- 研究与发展成果应用
- Document Code:
- A74EBB06AB1A4AB4A095305DE2E9583B
- Translation or Not:
- no
- Date of Publication:
- 2020-02-13