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Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors

Release time:2020-06-02
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Affiliation of Author(s):
微电子学院
Journal:
Physica E: Low-dimensional Systems and Nanostructures
All the Authors:
Cheng Aijie
First Author:
cuipeng
Indexed by:
研究与发展成果应用
Document Code:
A74EBB06AB1A4AB4A095305DE2E9583B
Translation or Not:
no
Date of Publication:
2020-02-13