Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
Release Time:2020-06-02
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
- Journal:
- Physica E: Low-dimensional Systems and Nanostructures
- First Author:
- 崔鹏
- All the Authors:
- 程爱杰
- Document Code:
- A74EBB06AB1A4AB4A095305DE2E9583B
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2020-02
- Release Time:
- 2020-06-02