Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I-V Characteristics
Release Time:2021-06-01
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I-V Characteristics
- Journal:
- ELECTRONICS
- First Author:
- 杨勇雄
- Document Code:
- FC264C5654C643F582F22CD4FE952E9F
- Volume:
- 9
- Issue:
- 10
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2020-10
- Release Time:
- 2021-06-01