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Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I-V Characteristics

Release time:2021-06-01
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Affiliation of Author(s):
集成电路学院
Journal:
ELECTRONICS
First Author:
杨勇雄
Document Code:
FC264C5654C643F582F22CD4FE952E9F
Volume:
9
Issue:
10
Number of Words:
3000
Translation or Not:
no
Date of Publication:
2020-10-01